NXH400N100H4Q2F2SG-R

DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG-R Q2PACK INPC PRESS FIT PINS PIM42, 93x47 (PRESSFIT) CASE 180BH This high−denity, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • • • • • • Extremely Efficient Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Module Design Offers High Power Density Low Inductive Layout Low Package Height These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Q2PACK INPC SOLDER PINS PIM44, 93x47 (SOLDER PIN) CASE 180BS Typical Applications • Solar Inverters • Uninterruptable Power Supplies Systems MARKING DIAGRAM NXH400N100H4Q2F2PG/SG ATYYWW NXH400N100H4Q2F2PG/SG = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Figure 1. NXH400N100H4Q2F2PG/SG/SG−R Schematic Diagram © Semiconductor Components Industries, LLC, 2020 March, 2023 − Rev. 4 1 Publication Order Number: NXH400N100H4Q2F2/D NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R PIN CONNECTIONS G2 40 NTC1 NTC2 42 41 E2 39 Ph1 38 Ph1 37 Ph1 36 Ph1 35 Ph1 34 Ph2 33 Ph2 32 Ph2 31 Ph2 29 Ph2 30 28 SP 27 25 26 G3 E3 SN 24 G1 23 E1 22 G4 21 E4 1 DC+ 2 DC+ 3 DC+ 4 DC+ 5 DC+ 6 N1 7 N1 8 N1 9 N1 10 N1 11 12 13 14 15 N2 N2 N2 N2 N2 16 17 DC− DC− 18 DC− 19 DC− 20 DC− Figure 2. Pin Connections ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage Positive Transient Gate−Emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 30 V IC 409 A IC(Pulse) 1227 A Maximum Power Dissipation (TJ = 150°C) Ptot 959 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage Positive Transient Gate−Emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 30 V IC 360 A IC(Pulse) 1080 A Maximum Power Dissipation (TJ = 175°C) Ptot 805 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C VRRM 1000 V IF 192 A IFRM 576 A OUTER IGBT (T1, T4) Continuous Collector Current @ TC = 80°C Pulsed Peak Collector Current @ TC = 80°C (TJ = 150°C) INNER IGBT (T2, T3) Continuous Collector Current @ TC = 80°C Pulsed Peak Collector Current @ TC = 80°C (TJ = 150°C) IGBT INVERSE DIODE (D1, D2, D3, D4) Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80°C Repetitive Peak Forward Current (TJ = 175°C) www.onsemi.com 2 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued) Rating Symbol Value Unit Maximum Power Dissipation (TJ = 175°C) Ptot 482 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C VRRM 1200 V IF 140 A Repetitive Peak Forward Current (TJ = 175°C) IFRM 420 A Maximum Power Dissipation (TJ = 175°C) Ptot 401 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C IGBT INVERSE DIODE (D1, D2, D3, D4) NEUTRAL POINT DIODE (D5, D6) Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters. THERMAL AND INSULATION PROPERTIES (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit TVJOP −40 to 150 °C Tstg −40 to 125 °C Vis 4000 VRMS 12.7 mm CTI >600 THERMAL PROPERTIES Operating Temperature under Switching Condition Storage Temperature Range INSULATION PROPERTIES Isolation Test Voltage, t = 2 s, 50 Hz (Note 3) Creepage Distance Comparative Tracking Index Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters. 3. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration. www.onsemi.com 3 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Characteristic Symbol Min Typ Max Unit ICES – – 500 mA VCE(sat) – 1.77 2.3 V – 2.11 – OUTER IGBT (T1, T4) CHARACTERISTICS Collector-Emitter Cutoff Current VGE = 0 V, VCE = 1000 V Collector-Emitter Saturation Voltage VGE = 15 V, IC = 400 A, TJ = 25°C VGE = 15 V, IC = 400 A, TJ = 150°C Gate-Emitter Threshold Voltage VGE = VCE, IC = 400 mA VGE(TH) 4.1 5.1 6.1 V Gate Leakage Current VGE = ±20 V, VCE = 0 V IGES – – ±2000 nA RG − 1.44 − W td(on) – 151 – ns tr – 35 – td(off) – 551 – Internal Gate Resistor Turn-on Delay Time Rise Time Turn-off Delay Time TJ = 25°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RGon = 6 W, RGoff = 11 W Fall Time Turn-on Switching Loss per Pulse Turn-off Switching Loss per Pulse tf – 68 – Eon – 3270 – Eoff – 5100 – td(on) – 146 – tr – 40 – td(off) – 626 – tf – 88 – Turn-on Switching Loss per Pulse Eon – 4165 – Turn-off Switching Loss per Pulse Eoff – 8420 – Cies – 26093 – Output Capacitance Coes – 1012 – Reverse Transfer Capacitance Cres – 104 – Turn-on Delay Time Rise Time Turn-off Delay Time TJ = 125°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RGon = 6 W, RGoff = 11 W Fall Time Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz mJ ns mJ pF Total Gate Charge VCE = 600 V, IC = 300 A, VGE = −15 V~15 V Qg – 1304 – nC Thermal Resistance − Chip-to-Heatsink Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK RthJH – 0.181 – K/W RthJC – 0.073 – K/W VF – 1.50 1.85 V – 2.07 – Thermal Resistance − Chip-to-Case NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS Diode Forward Voltage IF = 100 A, TJ = 25°C IF = 100 A, TJ = 150°C Reverse Recovery Time TJ = 25°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RG = 6 W trr – 19 – ns Qrr – 229 – nC Peak Reverse Recovery Current IRRM – 19 – A Peak Rate of Fall of Recovery Current di/dt – 6053 – A/ms Err – 164 – mJ trr – 34 – ns Reverse Recovery Charge Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge TJ = 125°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RG = 6 W Qrr – 359 – nC Peak Reverse Recovery Current IRRM – 17 – A Peak Rate of Fall of Recovery Current di/dt – 4621 – A/ms Reverse Recovery Energy Thermal Resistance − Chip-to-Heatsink Thermal Resistance − Chip-to-Case Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK www.onsemi.com 4 Err – 211 – mJ RthJH – 0.364 – K/W RthJC – 0.237 – K/W NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Characteristic Test Conditions Symbol Min Typ Max Unit ICES – – 500 mA VCE(sat) – 1.77 2.3 V – 2.11 – 5.1 6.1 V INNER IGBT (T2, T3) CHARACTERISTICS Collector-Emitter Cutoff Current VGE = 0 V, VCE = 1000 V Collector-Emitter Saturation Voltage VGE = 15 V, IC = 400 A, TJ = 25°C VGE = 15 V, IC = 400 A, TJ = 150°C Gate-Emitter Threshold Voltage VGE = VCE, IC = 400 mA VGE(TH) 4.1 Gate Leakage Current VGE = ±20 V, VCE = 0 V IGES – – ±2000 nA RG − 1.44 − W td(on) – 149 – ns tr – 37 – td(off) – 882 – Internal Gate Resistor Turn-on Delay Time Rise Time Turn-off Delay Time TJ = 25°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RGon = 6 W, RGoff = 23 W Fall Time Turn-on Switching Loss per Pulse Turn-off Switching Loss per Pulse tf – 35 – Eon – 4970 – Eoff – 6010 – td(on) – 146 – tr – 42 – td(off) – 977 – tf – 12 – Turn-on Switching Loss per Pulse Eon – 7790 – Turn-off Switching Loss per Pulse Eoff – 8530 – Cies – 26093 – Output Capacitance Coes – 1012 – Reverse Transfer Capacitance Cres – 104 – Turn-on Delay Time Rise Time Turn-off Delay Time TJ = 125°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RGon = 6 W, RGoff = 23 W Fall Time Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz mJ ns mJ pF Total Gate Charge VCE = 600 V, IC = 300 A, VGE = 15 V Qg – 1304 – nC Thermal Resistance − Chip-to-Heatsink Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK RthJH – 0.207 – K/W RthJC – 0.087 – K/W VF – 2.0 2.6 V – 1.77 – Thermal Resistance − Chip-to-Case IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS Diode Forward Voltage IF = 150 A, TJ = 25°C IF = 150 A, TJ = 150°C Reverse Recovery Time TJ = 25°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RG = 6 W trr – 105 – ns Qrr – 4179 – nC Peak Reverse Recovery Current IRRM – 97 – A Peak Rate of Fall of Recovery Current di/dt – 4571 – A/ms Err – 950 – mJ trr – 179 – ns Reverse Recovery Charge Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge TJ = 125°C VCE = 600 V, IC = 150 A VGE = −8 V, 15 V, RG = 6 W Qrr – 11900 – nC Peak Reverse Recovery Current IRRM – 132 – A Peak Rate of Fall of Recovery Current di/dt – 4167 – A/ms Reverse Recovery Energy Thermal Resistance − Chip-to-Heatsink Thermal Resistance − Chip-to-Case Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK www.onsemi.com 5 Err – 3750 – mJ RthJH – 0.316 – K/W RthJC – 0.197 – K/W NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Characteristic Test Conditions Symbol Min Typ Max Unit R25 – 22 – kW THERMISTOR CHARACTERISTICS Nominal Resistance T = 25°C Nominal Resistance T = 100°C Deviation of R25 Power Dissipation R100 – 1486 – W DR/R −5 – 5 % PD – 200 – mW Power Dissipation Constant – 2 – mW/K B-value B (25/50), tolerance ±3% – 3950 − K B-value B (25/100), tolerance ±3% – 3998 − K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number NXH400N100H4Q2F2PG PRESS FIT PINS NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R SOLDER PINS Marking Package Shipping NXH400N100H4Q2F2PG PIM42, 93x47 (PRESSFIT) (Pb−Free/Halide−Free) 12 Units / Blister Tray NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R PIM44, 93x47 (SOLDER PIN) (Pb−Free/Halide−Free) 12 Units / Blister Tray www.onsemi.com 6 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE Figure 3. Typical Output Characteristics – Inner IGBT Figure 4. Typical Output Characteristics – Inner IGBT Figure 5. Transfer Characteristics – Inner IGBT Figure 6. Saturation Voltage Characteristic Figure 7. Inverse Diode Forward Characteristics Figure 8. Buck Diode Forward Characteristics www.onsemi.com 7 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – OUTER IGBT Figure 9. Typical Turn ON Loss vs. IC Figure 10. Typical Turn OFF Loss vs. IC Figure 11. Typical Turn On Loss vs. Rg Figure 12. Typical Turn Off Loss vs. Rg Figure 13. Typical Turn−Off Switching Time vs. IC Figure 14. Typical Turn−On Switching Time vs. IC www.onsemi.com 8 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – OUTER IGBT (CONTINUED) Figure 15. Typical Turn−Off Switching Time vs. Rg Figure 16. Typical Turn−On Switching Time vs. Rg www.onsemi.com 9 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – INNER IGBT Figure 17. Typical Turn On Switching Time vs. IC Figure 18. Typical Turn Off Switching Time vs. IC Figure 19. Typical Turn On Switching Time vs. RG Figure 20. Typical Turn Off Switching Time vs. RG www.onsemi.com 10 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – INNER IGBT (CONTINUED) Figure 23. Typical Turn−Off Switching Time vs. IC Figure 24. Typical Turn−On Switching Time vs. IC Figure 21. Typical Turn−Off Switching Time vs. Rg Figure 22. Typical Turn−On Switching Time vs.Rg www.onsemi.com 11 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE Figure 25. Typical Reverse Recovery Energy Loss vs. IC Figure 26. Typical Reverse Recovery Energy Loss vs. Rg Figure 27. Typical Reverse Recovery Time vs. Rg Figure 28. Typical Reverse Recovery Charge vs. Rg Figure 29. Typical Reverse Recovery Peak Current vs. Rg www.onsemi.com 12 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – INVERSE DIODE Figure 30. Typical Reverse Recovery Energy Loss vs. IC Figure 31. Typical Reverse Recovery Energy Loss vs. Rg Figure 32. Typical Reverse Recovery Time vs. Rg Figure 33. Typical Reverse Recovery Charge vs. Rg Figure 34. Typical Reverse Recovery Peak Current vs. Rg www.onsemi.com 13 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE Figure 35. FBSOA − Outer IGBT Figure 36. RBSOA − Outer IGBT Figure 37. FBSOA − Inner IGBT Figure 38. RBSOA − Inner IGBT Figure 39. Gate Voltage vs. Gate Charge Figure 40. Capacitance Charge www.onsemi.com 14 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE (CONTINUED) Figure 41. Thermistor Characteristics Figure 42. Transient Thermal Impedance – Outer IGBT Figure 43. Transient Thermal Impedance – Inner IGBT www.onsemi.com 15 NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE (CONTINUED) Figure 44. Transient Thermal Impedance – Inverse Diode Figure 45. Transient Thermal Impedance – Neutral Point Diode www.onsemi.com 16 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM42, 93.00x47.00x12.00 CASE 180BH ISSUE A DATE 11 OCT 2023 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON09951H PIM42 93.00x47.00x12.00 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM42, 93.00x47.00x12.00 CASE 180BS ISSUE A DATE 12 OCT 2023 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON15232H PIM42 93.00x47.00x12.00 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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