NXH450B100H4Q2F2PG

DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450B100H4Q2F2, NXH450B100H4Q2F2PG-R Q2BOOST 3−CHANNEL PRESS FIT PINS CASE 180BG Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • • • • • Silicon/SiC Hybrid Technology Maximizes Power Density Low Switching Loss Reduces System Power Dissipation Low Inductive Layout Press−fit and Solder Pin Options This Device is Pb−Free, Halogen Free and is RoHS Compliant Q2BOOST 3−CHANNEL SOLDER PINS CASE 180BR Typical Applications • Solar Inverter • Uninterruptible Power Supplies MARKING DIAGRAM NXH450B100H4Q2F2PG/PG−R/SG ATYYWW G = Pb− Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code NXH450B100H4Q2F2PG/PG−R/SG = Specific Device Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION Figure 1. NXH450B100H4Q2F2PG/PG−R/SG Schematic Diagram © Semiconductor Components Industries, LLC, 2019 March, 2023 − Rev. 2 1 See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: NXH450B100H4Q2F2/D NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R Figure 2. Pins Assignments ABSOLUTE MAXIMUM RATINGS (Note 1) (Tj = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 1000 V Gate−Emitter Voltage Positive Transient Gate−Emitter Voltage (Tpulse = 5 μs, D < 0.10) VGE ±20 30 V Continuous Collector Current (@ VGE = 20 V, Tc = 80°C) IC 101 A Pulsed Peak Collector Current @ Tc = 80°C (TJ = 150°C) IC(Pulse) 303 A Power Dissipation (TC = 80°C, TJ = 150°C) Ptot 234 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature (Note 2) TJMAX 150 °C VRRM 1600 V IF 36 A Repetitive Peak Forward Current (TJ = 150°C, TJ limited by TJmax) IFRM 108 A Maximum Power Dissipation @ TC = 80°C (TJ = 150°C) Ptot 79 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V IF 36 A Repetitive Peak Forward Current (TJ = 150°C, TJ limited by TJmax) IFRM 108 A Maximum Power Dissipation @ TC = 80°C (TJ = 150 °C) Ptot 104 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C IGBT (Tx1, Tx2) IGBT INVERSE DIODE (DX1, DX2) AND BYPASS DIODE (DX5, DX6) Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80°C SILICON CARBIDE SCHOTTKY DIODE (DX3, DX4) Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. Qualification at 175°C per discrete TO247. www.onsemi.com 2 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R THERMAL AND INSULATION PROPERTIES (Note 3) (Tj = 25°C unless otherwise noted) Rating Symbol Value Unit TVJOP −40 to (Tjmax – 25) °C Tstg −40 to 125 °C Vis 4000 VRMS 12.7 Mm THERMAL PROPERTIES Operating Temperature under Switching Condition Storage Temperature Range THERMAL PROPERTIES Isolation Test Voltage, t = 2 sec, 50 Hz (Note 4) Creepage Distance Comparative Tracking Index CTI >600 3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 4. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration. www.onsemi.com 3 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R ELECTRICAL CHARACTERISTICS (Note 5) (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit V(BR)CES 1000 – – V VCESAT – 1.70 2.25 V – 2.03 – IGBT (TX1, TX2) Collector−Emitter Breakdown Voltage VGE = 0 V, IC =2 mA Collector−Emitter Saturation Voltage VGE = 15 V, IC = 150 A, TC = 25°C VGE = 15 V, IC = 150 A, TC = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 150 mA VGE(TH) 4.1 4.66 5.7 V Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1000 V ICES – − 600 A Gate Leakage Current VGE = ±20 V, VCE = 0 V IGES – – ±800 nA Turn−On Delay Time Tj = 25°C VCE = 600 V, IC = 50 A VGE = −8 V, +15 V, RG = 4  td(on) – 28 – ns tr – 10 – td(off) – 157 – tf – 22 – Turn on Switching Loss Eon – 403 – Turn off Switching Loss Eoff – 1651 – td(on) – 27 – tr – 12 – td(off) – 192 – tf – 32 – Turn on Switching Loss Eon – 594 – Turn off Switching Loss Eoff – 2138 – Cies – 9342 – Output Capacitance Coes – 328 – Reverse Transfer Capacitance Cres – 52 – Rise Time Turn−Off Delay Time Fall time Turn−On Delay Time Rise Time Tj = 125°C VCE = 600 V, IC = 50 A VGE = −8 V, +15 V, RG = 4  Turn−Off Delay Time Fall time Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz J ns J pF Gate Charge VCE = 600 V, VGE = 15 V, IC = 75 A Qg – 252 – nC Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2.1 Mil ± 2%  = 2.9 W/mK RthJH – 0.45 – K/W RthJC – 0.30 – K/W VF – 1.04 1.7 V – 0.94 – RthJH – 1.09 – K/W RthJC – 0.89 – K/W Thermal Resistance − Chip−to−Case IGBT INVERSE DIODE (DX1, DX2) AND BYPASS DIODE (DX5, DX6) Diode Forward Voltage IF = 30 A, TJ = 25°C IF = 30 A, TJ = 150°C Thermal Resistance − Chip−to−Heatsink Thermal Resistance − Chip−to−Case Thermal grease, Thickness = 2.1 Mil ± 2%  = 2.9 W/mK www.onsemi.com 4 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R ELECTRICAL CHARACTERISTICS (Note 5) (TJ = 25°C unless otherwise noted) (continued) Parameter Test Conditions Symbol Min Typ Max Unit SIC DIODE (DX3, DX4) Diode Reverse Leakage Current VR = 1200 V, TJ = 25°C IR – − 600 A Diode Forward Voltage IF = 30 A, TJ = 25°C VF − 1.42 1.7 V − 1.85 − trr – 20 – ns Qrr – 88 – nC Peak Reverse Recovery Current IRRM – 10 – A Peak Rate of Fall of Recovery Current di/dt – 4200 – A/s Err – 38 – J trr – 19 – ns Qrr – 87 – nC Peak Reverse Recovery Current IRRM – 9 – A Peak Rate of Fall of Recovery Current di/dt – 3154 – A/s Err – 35 – J RthJH – 0.97 – K/W RthJC – 0.67 – K/W R25 − 22 − k R100 − 1486 −  R/R −5 − 5 % PD − 200 − mW − 2 − mW/K IF = 30 A, TJ = 150°C TJ = 25°C VDS = 600 V, IC = 50 A VGE = −8 V, 15 V, RG = 4  Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy TJ = 125°C VDS = 600 V, IC = 50 A VGE = −8 V, 15 V, RG = 4  Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Thermal Resistance − Chip−to−Heatsink Thermal Resistance − Chip−to−Case Thermal grease, Thickness = 2.1 Mil ± 2%  = 2.9 W/mK THERMISTOR CHARACTERISTICS Nominal Resistance Nominal Resistance T = 100°C Deviation of R25 Power Dissipation Power Dissipation Constant B−Value B (25/50), tolerance ±3% − 3950 − K B−Value B (25/100), tolerance ±3% − 3998 − K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. PACKAGE MARKING AND ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH450B100H4Q2F2PG, NXH450B100H4Q2F2PG−R PRESS FIT PINS NXH450B100H4Q2F2PG, NXH450B100H4Q2F2PG−R Q2BOOST − Case 180BG (Pb−Free and Halide−Free Press Fit Pins) 12 Units / Blister Tray NXH450B100H4Q2F2SG SOLDER PINS NXH450B100H4Q2F2SG Q2BOOST − Case 180BR (Pb−Free and Halide−Free Solder Pins) 12 Units / Blister Tray www.onsemi.com 5 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R IC, Collector Current (A) IC, Collector Current (A) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE VCE, Collector − Emitter Voltage (V) VCE, Collector − Emitter Voltage (V) Figure 4. Typical Output Characteristics IC, Collector Current (A) IC, Collector Current (A) Figure 3. Typical Output Characteristics VGE, Gate−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) Figure 5. Transfer Characteristics IF, Forward Current (A) IF, Forward Current (A) Figure 6. Typical Saturation Voltage Characteristics VF, Forward Voltage (V) VF, Forward Voltage (V) Figure 7. Inverse Diode Forward Characteristics Figure 8. Boost Diode Forward Characteristics www.onsemi.com 6 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R EON, Turn Off Loss (J) EON, Turn On Loss (J) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED) IC (A) Rg () Figure 10. Typical Turn Off Loss vs. IC EON, Turn On Loss (J) EOFF, Turn Off Loss (J) Figure 9. Typical Turn On Loss vs. IC Rg () Rg () Err. Reverse Recovery Energy (J) Figure 12. Typical Turn Off Loss vs. RG Err. Reverse Recovery Energy (J) Figure 11. Typical Turn On Loss vs. RG IC (A) Rg () Figure 13. Typical Reverse Recovery Energy Loss vs. IC Figure 14. Typical Reverse Recovery Energy Loss vs. RG www.onsemi.com 7 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R Time (ns) Time (ns) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED) IC, Collector Current (A) IC, Collector Current (A) Figure 16. Typical Turn−Off Switching Time vs. IC Time (ns) Time (ns) Figure 15. Typical Turn−On Switching Time vs. IC Rg, Gate Resistor () Rg, Gate Resistor () Figure 18. Typical Turn−Off Switching Time vs. RG Trr, Reverse Recovery Time (ns) Trr, Reverse Recovery Time (ns) Figure 17. Typical Turn−On Switching Time vs. RG IC, Collector Current (A) Rg, Gate Resistor () Figure 19. Typical Reverse Recovery Energy Loss vs. IC Figure 20. Typical Reverse Recovery Energy Loss vs. RG www.onsemi.com 8 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R Qrr, Reverse Recovery Charge (nC) Qrr, Reverse Recovery Charge (nC) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED) IC, Collector Current (A) Rg, Gate Resistor () Figure 22. Typical Reverse Recovery Charge vs. RG Irrm, Reverse Recovery Current (A) Irrm, Reverse Recovery Current (A) Figure 21. Typical Reverse Recovery Charge vs. IC IC, Collector Current (A) Rg, Gate Resistor () Figure 24. Typical Reverse Recovery Peak Current vs. RG di/dt, Diode Current Slope (A/s) di/dt, Diode Current Slope (A/s) Figure 23. Typical Reverse Recovery Peak Current vs. IC IC, Collector Current (A) Rg, Gate Resistor () Figure 25. Typical di/dt Current Slope vs. IC Figure 26. Typical di/dt Current Slope vs. RG www.onsemi.com 9 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R Duty Cycle Peak Response (degC/W) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED) Pulse on Time (s) Duty Cycle Peak Response (degC/W) Figure 27. Transient Thermal Impedance − IGBT Pulse on Time (s) Duty Cycle Peak Response (degC/W) Figure 28. Transient Thermal Impedance − Inverse Diode Pulse on Time (s) Figure 29. Transient Thermal Impedance − Boost Diode www.onsemi.com 10 NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R IC, Collector Current (A) IC, Collector Current (A) TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED) VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) Figure 30. Forward Safe Operating Area Figure 31. Reverse Safe Operating Area Vge (V) Capacitance (pF) 100000 10000 1000 100 10 1 0.1 0.1 Qg (nC) 10 VCE, Collector to Emitter Voltage (V) Figure 33. Capacitance Charge Resistance () Figure 32. Gate Voltage vs. Gate Charge Temperature (°C) Figure 34. NTC Characteristics www.onsemi.com 11 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM56, 93x47 (PRESSFIT) CASE 180BG ISSUE O DATE 31 JUL 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW= Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON09950H PIM56 93X47 (PRESS FIT) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM56, 93x47 (SOLDER PIN) CASE 180BR ISSUE O DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW= Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON15231H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM56 93X47 (SOLDER PIN) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales