DATA SHEET
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Q1PACK Module
75 A, 650 V Module
NXH75M65L4Q1SG,
NXH75M65L4Q1PTG
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Module Design Offers High Power Density
Low Inductive Layout
Q1PACK Packages with Solder and Pressfit Pins
PIM27, 71x37.4
(SOLDER PIN)
CASE 180CA
PIM27, 71x37.4
(PRESSFIT PIN)
CASE 180CP
MARKING DIAGRAM
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
XXXXX
G
AT
YYWW
7, 8, 25, 26
DC+
= Specific Device Code
= Pb−Free Package
= Assembly & Test Site Code
= Year and Work Week Code
ORDERING INFORMATION
T12
See detailed ordering and shipping information on page 9 of
this data sheet.
T14
D20
6
G12
1
G14
5
S12
D22
2
S14
D21
15, 16
Ph2
17, 18
Ph1
T11
T21
D12
14
S21
11
G11
12
S11
T22
13
G21
27
A20
D14
20
G22
T13
19
S22
22
G13
21
S13
NTC
3
NTC1
4
NTC2
9, 10
DC−1
23,24
DC−2
Figure 1. Schematic
Figure 2. Pin Assignments
© Semiconductor Components Industries, LLC, 2020
March, 2021 − Rev. 1
1
Publication Order Number:
NXH75M65L4Q1SG/D
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
650
V
IC
59
A
Pulsed collector current, Tpulse limited by Tjmax
ICM
176
A
Power Dissipation Per IGBT
Tj = Tjmax, Th = 80°C
Ptot
83
W
Gate−emitter voltage
VGE
±20
V
TJ
175
°C
VRRM
650
V
IF
50
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
225
A
Power Dissipation Per Diode
Tj = Tjmax, Th = 80°C
Ptot
86
W
Maximum Junction Temperature
TJ
175
°C
TVJ OP
−40 to (Tjmax − 25)
°C
Tstg
−40 to 125
°C
Vis
4000
Vac
12.7
mm
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter voltage
Collector current @ Th = 80°C (per IGBT)
Maximum Junction Temperature
DIODE (D12, D14, D20, D21, D22)
Peak Repetitive Reverse Voltage
Forward Current, DC @ Th = 80°C (per Diode)
THERMAL PROPERTIES
Operating Temperature under switching condition
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 2 min, 60 Hz
Creepage distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
ICES
–
–
300
mA
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter cutoff current
VGE = 0 V, VCE = 650 V
Collector−emitter saturation voltage
VGE = 15 V, IC = 75 A, Tj = 25°C
VGE = 15 V, IC = 75 A, Tj = 150°C
VCE(sat)
–
–
1.56
1.76
2.22
–
V
Gate−emitter threshold voltage
VGE = VCE, IC = 75mA
VGE(TH)
3.1
4.45
5.2
V
Gate leakage current
VGE = 20 V, VCE = 0 V
IGES
–
–
400
nA
Turn−on delay time
Tj = 25°C
VCE =350 V, IC = 80 A
VGE = 15 V, −9 V, RG = 10 W
td(on)
–
38
–
ns
tr
–
34
–
td(off)
–
129
–
tf
–
17
–
Turn on switching loss
Eon
–
0.606
–
Turn off switching loss
Eoff
–
0.903
–
td(on)
–
37
–
Rise time
Turn−off delay time
Fall time
Turn−on delay time
Rise time
Tj = 125°C
VCE = 350 V, IC = 80 A
VGE = 15 V, −9 V, RG = 10 W
Turn−off delay time
Fall time
tr
–
34
–
td(off)
–
139
–
tf
–
23
–
Turn on switching loss
Eon
–
1.024
–
Turn off switching loss
Eoff
–
1.141
–
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2
mJ
ns
mJ
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
Cies
–
5665
–
pF
Output capacitance
Coes
–
205
–
Reverse transfer capacitance
Cres
–
100
–
Qg
–
550
–
nC
RthJH
–
1.15
–
°C/W
RthJC
–
0.75
–
°C/W
VF
–
–
2.25
1.7
2.7
–
V
Reverse Recovery Time
trr
–
63
–
ns
Reverse Recovery Current
Qrr
–
552
–
nc
IGBT (T11, T12, T13, T14, T21, T22)
Input capacitance
VCE = 30 V, VGE = 0 V, f = 1 MHz
Gate charge total
VCE = 480 V, IC = 50 A, VGE = ±15 V
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
Thermal Resistance − chip−to−case
IGBT INVERSE DIODE (D12, D14, D21, D22)
Forward voltage
Peak Reverse Recovery Current
IF = 50 A, Tj = 25°C
IF = 50 A, Tj = 175°C
Tj = 25°C
VCE = 350 V, IC = 80 A
VGE = 15 V, −9 V, RG = 10 W
Irrm
–
25
–
A
Di/dtmax
–
1.80
–
A/ms
Err
–
136
–
mJ
Reverse Recovery Time
trr
–
135
–
ns
Reverse Recovery Current
Qrr
–
1538
–
nc
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Tj = 125°C
VCE = 350 V, IC = 50 A
VGE = 15 V, −9 V, RG = 10 W
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
Irrm
–
43
–
A
Di/dtmax
–
1.60
–
A/ms
Err
–
346
–
mJ
RthJH
–
1.10
–
°C/W
RthJC
–
0.79
–
°C/W
VF
–
–
2.25
1.7
2.7
–
V
DIODE (D20)
Forward voltage
IF = 50 A, Tj = 25°C
IF = 50 A, Tj = 175°C
Reverse leakage current
VCE = 650 V, VGE = 0 V
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
Thermal Resistance − chip−to−case
Ir
–
–
300
mA
RthJH
–
1.10
–
°C/W
RthJC
–
0.79
–
°C/W
THERMISTOR CHARACTERISTICS
Nominal resistance
T = 25°C
R25
−
22
−
kW
Nominal resistance
T = 100°C
R100
−
1486
−
W
Deviation of R25
R/R
−5
−
5
%
Power dissipation
PD
−
200
−
mW
−
2
−
mW/°C
Power dissipation constant
B−value
B (25/50), tol ±3%
−
−
3950
°C
B−value
B (25/100), tol ±3%
−
−
3998
°C
−
−
B
NTC reference
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − IGBT (T11, T12, T13, T14, T21, T22)
200
TJ = 25°C
180
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
200
160
140
VGE = 7.000V
VGE = 8.000V
VGE = 9.000V
VGE = 10.00V
VGE = 11.00V
VGE = 13.00V
VGE = 15.00V
VGE = 17.00V
VGE = 19.00V
VGE = 20.00V
120
100
80
60
40
20
0
0
1
2
3
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
140
VGE = 7.000V
VGE = 8.000V
VGE = 9.000V
VGE = 10.00V
VGE = 11.00V
VGE = 13.00V
VGE = 15.00V
VGE = 17.00V
VGE = 19.00V
VGE = 20.00V
120
100
80
60
40
20
0
4
TJ = 150°C
180
0
Figure 3. Typical Output Characteristics
3
4
160
TJ = 25°C
180
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
2
Figure 4. Typical Output Characteristics
200
TJ = 125°C
160
TJ = 150°C
140
120
100
80
60
40
20
0
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
1
2
3
4
5
6
VGE, GATE−EMITTER VOLTAGE (V)
7
140
120
100
80
60
40
0
8
TJ = 25°C
TJ = 125°C
TJ = 150°C
20
0
Figure 5. Typical Transfer Characteristics
1
2
VF, FORWARD VOLTAGE (V)
3
4
Figure 6. Diode Forward Characteristics
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE
1800
1400
EOFF, TURN OFF LOSS (mJ)
EON, TURN ON LOSS (mJ)
1800
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
1600
25°C
125°C
1200
1000
800
600
400
200
0
0
20
40
60
80
IC (A)
100
120
1400
1200
1000
800
600
400
25°C
125°C
200
0
140
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
1600
0
Figure 7. Typical Turn ON Loss vs. IC
20
40
60
80
IC (A)
100
120
Figure 8. Typical Turn OFF Loss vs. IC
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140
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE (CONTINUED)
1400
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
1800
1600
EOFF, TURN OFF LOSS (mJ)
EON, TURN ON LOSS (mJ)
2000
25°C
125°C
1400
1200
1000
800
600
400
5
10
15
Rg (W)
20
25
1200
1100
1000
900
800
30
Figure 9. Typical Turn ON Loss vs. RG
TIME (ns)
TIME (ns)
Td(off)
25°C
125°C
100
50
tf
40
60
80
100
IC, COLLECTOR CURRENT (A)
120
30
20
15
tr
25°C
125°C
20
40
60
80
100
IC, COLLECTOR CURRENT (A)
120
80
140
Td(on)
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
70
60
150
TIME (ns)
TIME (ns)
25
Figure 12. Typical Turn−On Switching Time vs. IC
Td(off)
VGE = +15 V, −9 V
210 VCE = 350 V
IC = 80 A
180
20
25
0
0
140
Figure 11. Typical Turn−Off Switching Time vs. IC
240
Rg (W)
5
0
20
15
30
10
0
10
50
VGE = +15 V, −9 V
45 VCE = 350 V
Rg = 10 W
40
35 Td(on)
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
150
5
Figure 10. Typical Turn OFF Loss vs. RG
250
200
25°C
125°C
VGE = +15 V, −9 V
VCE = 350 V
1300 IC = 80 A
120
25°C
125°C
90
50
tr
40
60
tf
30
0
5
10
15
20
Rg, GATE RESISTOR (W)
25
30
20
30
Figure 13. Typical Turn−Off Switching Time vs. Rg
25°C
125°C
5
10
15
20
Rg, GATE RESISTOR (W)
25
Figure 14. Typical Turn−On Switching Time vs. Rg
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5
30
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE
1800
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
1200
1000
EOFF, TURN OFF LOSS (mJ)
EON, TURN ON LOSS (mJ)
1400
25°C
125°C
800
600
400
200
0
0
20
40
60
80
IC (A)
100
120
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
1500
25°C
125°C
1200
900
600
300
0
140
0
Figure 15. Typical Turn ON Loss vs. IC
1300
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
1600
1400
25°C
125°C
1200
1000
800
600
400
5
10
15
Rg (W)
20
25
900
5
10
15
Rg (W)
20
25
30
Figure 18. Typical Turn OFF Loss vs. RG
60
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
50
40
TIME (ns)
TIME (ns)
140
1000
30
Td(off)
25°C
125°C
Td(on)
30
20
50
tr
10
tf
0
120
25°C
125°C
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
100
100
1100
250
150
60
80
IC (A)
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
1200
Figure 17. Typical Turn ON Loss vs. RG
200
40
Figure 16. Typical Turn OFF Loss vs. IC
EOFF, TURN OFF LOSS (mJ)
EON, TURN ON LOSS (mJ)
1800
20
25°C
125°C
0
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
60
0
70
Figure 19. Typical Turn−Off Switching Time vs. IC
20
100
40
60
80
IC, COLLECTOR CURRENT (A)
120
Figure 20. Typical Turn−On Switching Time vs. IC
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140
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE (CONTINUED)
250
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
200
90
td(off)
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
80
td(on)
70
TIME (ns)
TIME (ns)
150
25°C
125°C
100
60
tr
50
40
50
0
5
10
20
15
Rg, GATE RESISTOR (W)
25
25°C
125°C
30
tf
20
30
Figure 21. Typical Turn−Off Switching Time vs. Rg
5
10
15
20
Rg, GATE RESISTOR (W)
30
25
Figure 22. Typical Turn−On Switching Time vs. Rg
700
Err, REVERSE RECOVERY ENERGY (mJ)
Err, REVERSE RECOVERY ENERGY (mJ)
TYPICAL CHARACTERISTICS − DIODE
VGE = +15 V, −9 V
VCE = 350 V
Rg = 10 W
600
500
25°C
125°C
400
300
200
100
0
0
20
40
60
80
IC (A)
100
120
140
130
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
25°C
125°C
70
50
30
5
10
15
20
Rg, GATE RESISTOR (W)
400
350
300
250
200
25°C
125°C
150
100
50
0
5
10
20
15
25
30
25
30
Figure 24. Typical Reverse Recovery Energy Loss vs. RG
Qrr, REVERSE RECOVERY CHARGE (nC)
trr, REVERSE RECOVERY TIME (ns)
150
90
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
450
Rg (W)
Figure 23. Typical Reverse Recovery Energy Loss vs. IC
110
500
Figure 25. Typical Reverse Recovery Time vs. Rg
1800
1600
1400
1200
VGE = +15 V, −9 V
1000 VCE = 350 V
IC = 80 A
800
25°C
125°C
600
400
200
0
5
10
15
20
Rg, GATE RESISTOR (W)
25
30
Figure 26. Typical Reverse Recovery Charge vs. Rg
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NXH75M65L4Q1SG, NXH75M65L4Q1PTG
50
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
45
40
35
30
25
20
25°C
125°C
15
10
5
10
15
20
30
25
di/dt, DIODE CURRENT SLOPE (A/ms)
Irrm, REVERSE RECOVERY CURRENT (ms)
TYPICAL CHARACTERISTICS − DIODE (CONTINUED)
2.0
1.9
VGE = +15 V, −9 V
VCE = 350 V
IC = 80 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
25°C
125°C
5
10
Rg, GATE RESISTOR (W)
15
20
25
30
Rg, GATE RESISTOR (W)
Figure 27. Typical Reverse Recovery Peak Current vs. Rg
Figure 28. Typical di/dt vs. Rg
TYPICAL CHARACTERISTICS
140
100
Ic Module
80
VGS (V)
Ic Chip
120
60
40
20 VGE = +15 V −9 V, TJ = Tjmax − 25°C,
RGoff = 40 W
0
0
100
200
300
400
500
600
700
15
13
11
9
7
5
3
1
−1
−3
−5
−7
−9
−11
−13
−15
VCE = 350 V
IC = 75 A
0
50
100
150
200
Qg, Gate Charge (nC)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 29. RBSOA Reverse Safe Operating Area
100
100 ms
10
50 ms
1 ms
1
0.1
Single Nonrepetitive Pulse TC = 25°C,
Curves must be derated linearly with
increase in temperature
1
250
Figure 30. IGBT Gate Charge
1000
IC COLLECTOR CURRENT (A)
IC, COLLECTORCURRENT (A)
160
10
DC
100
VCE COLLECTOR−EMITTER VOLTAGE (V)
Figure 31. IGBT Safe Operating Area
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1000
300
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
DUTY CYCLE PEAK RESPONSE (°C/W)
TYPICAL THERMAL CHARACTERISTICS
10.0E+0
1.0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
100.0E−3
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
10.0E−3
100.0E−6
1.0E−3
10.0E−3
100.0E−3
1.0E+0
10.0E+0
100.0E+0
PULSE ON TIME (s)
DUTY CYCLE PEAK RESPONSE (°C/W)
Figure 32. Transient Thermal Impedance – IGBT
10.0E+0
1.0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
100.0E−3
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
10.0E−3
100.0E−6
1.0E−3
10.0E−3
100.0E−3
1.0E+0
10.0E+0
PULSE ON TIME (s)
Figure 33. Transient Thermal Impedance – Diode
ORDERING INFORMATION
Device
Package Type
Shipping
NXH75M65L4Q1SG (Solder Pin)
PIM27, 71x37.4
Q1PACK
21 Units / BTRAY
NXH75M65L4Q1PTG (Pressfit Pin)
PIM27, 71x37.4
Q1PACK
21 Units / BTRAY
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100.0E+0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
DATE 14 DEC 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM27, 71X37.4 (SOLDER PIN)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DATE 14 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
G
= Pb−Free Device
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM27, 71X37.4 (SOLDER PIN)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (PRESSFIT PIN)
CASE 180CP
ISSUE A
DATE 20 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26650H
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM27, 71X37.4 (PRESSFIT PIN)
PAGE 1 OF 1
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