NZD5V6MUT5G

Zener Voltage Regulators 200 mW Micro Packaged NZD5V1MU Series This Zener diode is designed to provide voltage regulation protection and is especially attractive in situations where space is at a premium. Because of its small size, it is suited for use in mobile applications. www.onsemi.com Specification Features: • Standard Zener Breakdown Voltage Range: 2.2 V to 9.1 V • Steady State Power Rating of 200 mW • Small Body Outline Dimensions: 1 Cathode 2 Anode 0.60 mm x 0.30 mm • Low Body Height: 0.30 mm • ESD Rating of Class 3 (>8 kV) per Human Body Model • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM PIN 1 Compliant X M Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Symbol Max Unit PD 200 mW RqJA 400 °C/W TJ, Tstg −55 to +150 °C TL 260 °C June, 2020 − Rev. 6 = Specific Device Code = Month Code ORDERING INFORMATION Device NZDxxxMUT5G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2016 XM X3DFN2 CASE 152AF Mechanical Characteristics: MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C 1 Package Shipping† X3DFN (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. Publication Order Number: NZD5V1MU/D NZD5V1MU Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IR VF IZT Zener Voltage Regulator Maximum Temperature Coefficient of VZ Max. Capacitance @VR = 0 and f = 1 MHz 100 80 POWER DISSIPATION (%) QVZ IF 60 40 20 0 0 25 50 75 100 125 TEMPERATURE (°C) Figure 1. Steady State Power Derating www.onsemi.com 2 150 V NZD5V1MU Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 1) VZ (Volts) Zener Impedance @ IZT ZZT @ IZT Device Marking Min Max mA W NZD2V2MUT5G K* 2.08 2.30 4 NZD2V4MUT5G D*** 2.28 2.52 NZD2V7MUT5G E*** 2.57 2.84 NZD3V0MUT5G Q* 2.85 NZD3V3MUT5G F*** NZD3V6MUT5G J*** NZD3V9MUT5G NZD4V3MUT5G NZD4V7MUT5G Leakage Current ZZK @ IZK QVZ (mV/k) @ IZT IR @ VR C @ VR = 0 f = 1 MHz W mA mA Volts Min Max pF 100 1000 1 50 1 −3.5 0 210 5 100 1000 1 50 1 −3.5 0 210 5 100 1000 1 20 1 −3.5 0 210 3.15 5 100 1000 1 10 1 −3.5 0 210 3.14 3.47 5 100 1000 1 10 1 −3.5 0 210 3.42 3.78 5 100 1000 1 10 1 −3.5 0 210 L 3.71 4.10 5 100 1000 1 5 1 −3.5 −2.5 210 D** 4.09 4.52 5 100 1000 1 5 1 −3.5 0 210 P 4.47 4.94 5 100 800 0.5 2 1 −3.5 0.2 150 NZD5V1MUT5G Q 4.85 5.36 5 80 500 0.5 2 1.5 −2.7 1.2 130 NZD5V6MUT5G R 5.32 5.88 5 60 200 0.5 1 2.5 −2.0 2.5 115 NZD6V2MUT5G T 5.89 6.51 5 60 100 0.5 1 3.0 0.4 3.7 110 NZD6V8MUT5G K*** 6.46 7.14 5 40 60 0.5 0.5 3.5 1.2 4.5 105 NZD7V5MUT5G L*** 7.13 7.88 5 30 60 0.5 0.5 4.0 2.5 5.3 100 NZD8V2MUT5G 2 7.79 8.61 5 30 60 0.5 0.5 5.0 3.2 6.2 90 NZD9V1MUT5G E** 8.65 9.56 5 30 60 0.5 0.5 6.0 3.8 7.0 80 Device *Rotated 90°. **Rotated 180°. ***Rotated 270°. 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A DATE 17 FEB 2015 SCALE 8:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C A 2X 0.05 C A1 SIDE VIEW C MILLIMETERS MIN MAX 0.25 0.33 −−− 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 GENERIC MARKING DIAGRAM* SEATING PLANE PIN 1 XM e 1 2X 0.05 M 2 2X b X = Specific Device Code M = Date Code 0.05 L2 M C A B RECOMMENDED MOUNTING FOOTPRINT* C A B BOTTOM VIEW 0.74 2X 0.30 1 2X 0.31 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON56472E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. X3DFN2, 0.62X0.32, 0.355P, (0201) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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