NZF220DFT1G,
SNZF220DFT1G
EMI Filter with ESD
Protection
Features
•
•
•
•
•
•
•
•
•
2 EMI/RFI Bi−directional “Pi” Low−Pass Filters
ESD Protection Meets IEC61000−4−2
Diode Capacitance: 7 − 10 pF
Zener/Resistor Line Capacitance: 22 ±20% pF
Low Zener Diode Leakage: 1 mA Maximum
Zener Breakdown Voltage; 6 − 8 V
AEC−Q101 Qualified and PPAP Capable − SNZF220DFT1G
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices
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CIRCUIT DESCRIPTION
Pin 4
Pin 5
Pin 3
Benefits
Pin 2
(GND)
• Designed to suppress EMI/RFI Noise in Systems Subjected to
Pin 1
Electromagnetic Interference
• Nominal Cutoff Frequency of 220 MHz (per Figure 2)
• Small Package Size Minimizes Parasitic Inductance, Thus a More
SC−88A
DF SUFFIX
CASE 419A
“Ideal” Low Pass Filtering Response
Typical Applications
•
•
•
•
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
MARKING DIAGRAM
5
FA D
G
MAXIMUM RATINGS
Rating
4
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
8 × 20 ms Pulse
PPK
14
W
Maximum Junction Temperature
TJ
150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Between I/O Pins
1
2
3
FA = Specific Device Code
D = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
NZF220DFT1G
SC−88A
(Pb−Free)
3000 / Tape &
Reel
SNZF220DFT1G
SC−88A
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1
Publication Order Number:
NZF220DFT1/D
NZF220DFT1G, SNZF220DFT1G
ELECTRICAL CHARACTERISTICS
Min
Typ
Max
Unit
VZ
Symbol
Zener Breakdown Voltage, @ IZT = 1 mA
Characteristic
6.0
−
8.0
V
Ir
Zener Leakage Current, @ VR = 3 V
N/A
−
1.0
mA
VF
Zener Forward Voltage, @ IF = 50 mA
N/A
−
1.5
V
Capacitance
Zener Internal Capacitance, @ 0 V Bias
7.0
−
10
pF
Capacitance
Zener/Resistor Array Line Capacitance
17.6
−
26.4
pF
Resistor
Resistance
90
−
110
W
FC (Note 2)
Cutoff Frequency
−
220
−
MHz
2. 50 W Source and 50 W Lead Termination per Figure 2.
Applications Information
Suppressing Noise at the Source
• Filter all I/O signals leaving the noisy environment
• Locate I/O driver circuits close to the connector
• Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
• Filter all I/O signals entering the unit
• Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
•
•
•
•
•
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
• Locate the suppression devices as close to the I/O connector as possible
• Minimize the PCB trace length to the suppression device
• Minimize the PCB trace length for the ground return for the suppression device
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2
NZF220DFT1G, SNZF220DFT1G
FREQUENCY RESPONSE SPECIFICATION
TRACKING
GENERATOR
TG OUTPUT
SPECTRUM
ANALYZER
50 W
RF INPUT
NZF220DF
50 W
VG
Vin
Vout
TEST BOARD
Test Conditions:
Source Impedance = 50 W
Load Impedance = 50 W
Input Power = 0 dB
NZF220DF
Figure 1. Measurement Conditions
0
GAIN (dB)
−6.3
−10
Y
−20
Y OUTPUT
3 dB = 220 MHz
−30
−40
−50
1.0
10
100
1000
f, FREQUENCY (MHz)
Figure 2. Typical EMI Filter Response
(50 W Source and 50 W Lead Termination)
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3
3000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
SCALE 2:1
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
DATE 17 JAN 2013
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
GENERIC MARKING
DIAGRAM*
C
K
H
XXXMG
G
SOLDER FOOTPRINT
0.50
0.0197
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
mm Ǔ
ǒinches
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. EMITTER
3. BASE
4. COLLECTOR
5. CATHODE
STYLE 3:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
STYLE 4:
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
5. GATE 2
STYLE 6:
PIN 1. EMITTER 2
2. BASE 2
3. EMITTER 1
4. COLLECTOR
5. COLLECTOR 2/BASE 1
STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
STYLE 8:
PIN 1. CATHODE
2. COLLECTOR
3. N/C
4. BASE
5. EMITTER
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42984B
STYLE 5:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
SC−88A (SC−70−5/SOT−353)
PAGE 1 OF 1
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