NZL7V5AXV3T1G

NZL5V6AXV3T1 Series ESD Protection Diode Dual Common Anode These dual monolithic silicon ESD protection diodes are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. www.onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional • • • • Mechanical Characteristics: 3 Lx SC−89 CASE 463C STYLE 4 L x M G M • Configurations or a Single Bidirectional Configuration ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Meets IEC61000−4−2 Level 4 Low Leakage < 5.0 mA SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM G 1 G 2 = Device Code = Specific Device = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION CASE: Void-free, Transfer-molded, Thermosetting Plastic Epoxy Meets UL 94, V−0 Device Package Shipping† LEAD FINISH: 100% Matte Sn (Tin) NZL5V6AXV3T1G SC−89 3000/Tape & Reel MOUNTING POSITION: Any SZNZL5V6AXV3T1G SC−89 3000/Tape & Reel NZL6V8AXV3T1G SC−89 SZNZL6V8AXV3T1G SC−89 3000/Tape & Reel 3000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements NZL6V8AXV3T3G SC−89 10000/Tape & Reel SZNZL6V8AXV3T3G SC−89 10000/Tape & Reel SC−89 3000/Tape & Reel SZNZL7V5AXV3T1G SC−89 NZL7V5AXV3T1G 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 October, 2018 − Rev. 7 1 Publication Order Number: NZL5V6AXV3T1/D NZL5V6AXV3T1 Series MAXIMUM RATINGS Symbol Value Unit Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Rating °PD° 240 1.9 °mW° mW/°C Thermal Resistance Junction to Ambient RqJA 525 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C TL 260 °C ESD 10 10 kV Lead Solder Temperature − Maximum (10 Second Duration) IEC61000−4−2 Contact IEC61000−4−2 Air Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 board with minimum recommended mounting pad. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol VRWM IR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR VC VBR VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF V IR VF IT IPP Uni−Directional Zener ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max @ IF = 10 mA for all types) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) Breakdown Voltage IR @ VRWM VBR (Note 2) (V) Surge @ IzT VC (V) @ IPP = 1.0 A† VC (V) @ Max IPP† Max IPP (A)† Ppk (W)† Device Device Marking VRWM V mA Min Nom Max mA Typ Max NZL5V6AXV3T1 L0 3.0 5.0 5.32 5.6 5.88 5.0 7.0 10.1 4.8 50 NZL6V8AXV3T1 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL6V8AXV3T3 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL7V5AXV3T1 L3 5.0 1.0 7.12 7.5 7.88 5.0 8.8 13.5 5.7 75 2. VBR measured at pulse test current IT at an ambient temperature of 25°C. † Surge current waveform per Figure 5. www.onsemi.com 2 Typ NZL5V6AXV3T1 Series 9.0 250 200 7V5 8.0 6V8 7.0 6.0 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) TYPICAL CHARACTERISTICS 5V6 5.0 −55 −5 150 5V6 100 6V8 50 + 45 + 95 TEMPERATURE (°C) 7V5 0 −55 + 145 −5 Figure 1. Typical Breakdown Voltage versus Temperature Figure 2. Typical Leakage Current versus Temperature 50 300 PD, POWER DISSIPATION (mW) 45 35 30 5V6 25 6V8 7V5 20 15 10 5 0 0.4 0.8 1.2 1.6 250 200 150 100 0 2.0 FR−5 BOARD 50 0 25 50 VOLTAGE (V) Figure 3. Typical Capacitance versus Bias Voltage 75 100 125 TEMPERATURE (°C) 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 150 175 Figure 4. Steady State Power Derating Curve (Upper curve for each part is unidirectional mode, lower curve is bidirectional mode) % OF PEAK PULSE CURRENT CAPACITANCE (pF) 40 0 + 145 + 45 + 95 TEMPERATURE (°C) 40 60 t, TIME (ms) Figure 5. 8 x 20 ms Pulse Waveform www.onsemi.com 3 80 NZL5V6AXV3T1 Series Figure 6. Positive 8 kV contact per IEC 6100−4−2 − NZL6V8AXV3T1G Figure 7. Negative 8 kV contact per IEC 6100−4−2 − NZL6V8AXV3T1G www.onsemi.com 4 NZL5V6AXV3T1 Series TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in an SC−89 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of surge protection applications are illustrated below. A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND NZLxxxAXV3T1 Figure 8. Computer Interface Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS I/O CPU NZLxxxAXV3T1 CLOCK CONTROL BUS GND NZLxxxAXV3T1 Figure 9. Microprocessor Protection www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−89, 3 LEAD CASE 463C−03 ISSUE C DATE 31 JUL 2003 SCALE 4:1 A −X− 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. B −Y− S K G 2 PL D 0.08 (0.003) M M C DIM A B C D G H J K L M N S 3 PL X Y J N −T− STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE SEATING PLANE MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE 3 xx D 1 H H 2 xx = Specific Device Code D = Date Code L *This information is generic. Please refer to device data sheet for actual part marking. G RECOMMENDED PATTERN OF SOLDER PADS DOCUMENT NUMBER: DESCRIPTION: 98AON11472D SC−89, 3 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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