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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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D44H8 / NZT44H8
NPN Power Amplifier
Features
• This device is designed for power amplifier, regulator
and switching circuits where speed is important.
• Sourced from process 4Q.
C
E
C
B
B
C
E
TO-220
Figure 1. D44H8 Device Package
SOT-223
Figure 2. NZT44H8 Device Package
Ordering Information
Part Number
Marking
Package
Packing Method
D44H8
D44H8
TO-220 3L
Rail
NZT44H8
44H8
SOT-223 4L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
IC
TJ, TSTG
Parameter
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
Unit
60
V
8.0
A
-55 to +150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 Rev. 1.1.0
www.fairchildsemi.com
D44H8 / NZT44H8 — NPN Power Amplifier
November 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Parameter
Unit
D44H8
NZT44H8
Total Device Dissipation
60
1.5
W
Derate Above 25°C
480
12
mW/°C
RθJC
Thermal Resistance, Junction-to-Case
2.1
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
PD
°C/W
83.3
°C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
Parameter
Conditions
Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0
Min.
Max.
60
Unit
V
ICBO
Collector-Base Cut-Off Current
VCB = 60 V, IE = 0
10
μA
IEBO
Emitter-Base Cut-Off Current
VEB = 5 V, IC = 0
100
μA
hFE
DC Current Gain
VCE = 1 V, IC = 2 A
60
VCE = 1 V, IC = 4 A
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8 A, IB = 0.4 A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 8 A, IB = 0.8 A
1.5
V
VBE(on)
Base-Emitter On Voltage
VCE = 2 V, IC = 10 mA
Current Gain-Bandwidth Product
IC = 500 mA, VCE = 10 V
fT
© 1997 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 Rev. 1.1.0
0.52
50
0.65
V
MHz
www.fairchildsemi.com
2
D44H8 / NZT44H8 — NPN Power Amplifier
Thermal Characteristics(3)
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
0.8
200
Vce = 5V
125 ° C
25 °C
100
0.4
50
- 40 ºC
0.2
- 40 °C
0
0.01 0.02
0.05 0.1 0.2
0.5 1
2
I C - COLLECTOR CURRENT (A)
5
10
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
25 °C
125 ºC
0
0.1
1
I C - COLLECTOR CURRENT (A)
10
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
β = 10
0.6
150
2
1.4
β = 10
V CE = 5V
1.2
1.5
- 40 ºC
1
25 °C
I
C
- 40 ºC
0.8
125 ºC
1
- COLLECTOR CURRENT (A)
25 °C
125 ºC
0.6
0.5
0.1
1
0.4
0.1
10
1
I C - COLLECTOR CURRENT (A)
10
P 4Q
ICBO- COLLECTOR CURRENT (nA)
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base-Emitter On Voltage
vs. Collector Current
100
V CB = 50V
10
1
0.1
0.01
25
50
75
100
125
TA - AMBIENT TEMPERATURE ( ºC)
150
Figure 8. Junction Capacitance vs.
Reverse Bias Voltage
Figure 7. Current Cut-Off Current
vs. Ambient Temperature
©1997 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 Rev. 1.1.0
www.fairchildsemi.com
3
D44H8 / NZT44H8 — NPN Power Amplifier
Typical Performance Characteristics
Figure 9. Safe Operating Area TO-220
PD - POWER DISSIPATION (W)
Figure 10. Maximum Power Dissipation vs.
Case Temperature
1.5
1.25
1
0.75
0.5
0.25
0
Figure 11. Maximum Power Dissipation vs.
Ambient Temperature
SOT-223
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
Figure 12. Power Dissipation vs.
Ambient Temperature
Figure 13. Thermal Response in TO-220 Package
©1997 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 Rev. 1.1.0
www.fairchildsemi.com
4
D44H8 / NZT44H8 — NPN Power Amplifier
Typical Performance Characteristics (Continued)
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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