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NZT560 / NZT560A
NPN Low-Saturation Transistor
Features
• These devices are designed with high-current gain and low-saturation
voltage with collector currents up to 3 A continuous.
4
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
NZT560
560
SOT-223 4L
Tape and Reel
NZT560A
560A
SOT-223 4L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
Collector Current - Continuous
3
A
-55 to +150
°C
IC
TJ, TSTG
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2003 Fairchild Semiconductor Corporation
NZT560 / NZT560A Rev. 1.1.0
www.fairchildsemi.com
NZT560 / NZT560A — NPN Low-Saturation Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Power Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Max.
Unit
1
W
8
mW/°C
125
°C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
60
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
80
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
5
ICBO
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
100
nA
VCB = 30 V, IE = 0, TA = 100°C
10
μA
100
nA
VEB = 4 V, IC = 0
IC = 100 mA, VCE = 2 V
hFE
VCE(sat)
DC Current Gain
IC = 500 mA, VCE = 2 V
(4)
70
NZT560
100
300
NZT560A
250
550
IC = 1 A, VCE = 2 V
80
IC = 3 A, VCE = 2 V
25
IC = 1 A, IB = 100 mA
Collector-Emitter Saturation
Voltage(4)
IC = 3 A, IB = 300 mA
(4)
V
VCB = 30 V, IE = 0
300
NZT560
450
NZT560A
400
mV
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1 A, IB = 100 mA
1.25
V
VBE(on)
Base-Emitter On Voltage(4)
IC = 1 A, VCE = 2 V
1
V
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
30
pF
fT
Transition Frequency
IC = 100 mA, VCE = 5 V,
f = 100 MHz
75
MHz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 2003 Fairchild Semiconductor Corporation
NZT560 / NZT560A Rev. 1.1.0
www.fairchildsemi.com
2
NZT560 / NZT560A — NPN Low-Saturation Transistor
Thermal Characteristics(3)
VBEON- BASE-EMITTER ON VOLTAGE (V)
VBESAT-BASE-EMITTER SATURATION VOLTAGE(V)
1.4
β = 10
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
1.4
Vce = 2.0V
1.2
1
- 40 °C
0.8
0.6
0.4
125 °C
0.2
0.0001
Figure 1. Base-Emitter Saturation Voltage
vs. Collector Current
0.8
450
β = 10
0.6
125°C
25°C
0.4
- 40°C
0.2
10
f = 1.0 MHz
400
350
C ibo
300
250
200
150
100
C obo
50
0
0.001
0.01
0.1
1
(mA)
I C- COLLECTOR CURRENT (mA)
0
0.1
10
Figure 3. Collector-Emitter Saturation Voltage
vs. Collector Current
0.2
0.5 1
2
5
10 20
V CE - COLLECTOR VOLTAGE (V)
50
100
Figure 4. Input / Output Capacitance
vs. Reverse Bias Voltage
700
400
VCE = 2 V
NZT560A
NZT560
300
hFE- DC CURRENT GAIN
600
hFE- DC CURRENT GAIN
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Figure 2. Base-Emitter On Voltage
vs. Collector Current
CAPACITANCE (pf)
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
25 °C
o
TA=150 C
o
200
25 C
o
-40 C
100
0
0.001
0.010
0.100
1.000
o
400
25 C
VCE = 2 V
300
o
-40 C
200
100
0.010
0.100
1.000
10.000
IC- COLLECTOR CURRENT [A]
IC- COLLECTOR CURRENT [A]
Figure 6. Current Gain vs. Collector Current
Figure 5. Current Gain vs. Collector Current
© 2003 Fairchild Semiconductor Corporation
NZT560 / NZT560A Rev. 1.1.0
500
0
0.001
10.000
o
TA=125 C
www.fairchildsemi.com
3
NZT560 / NZT560A — NPN Low-Saturation Transistor
Typical Performance Characteristics
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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