NZT605

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T C Symbol = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 110 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range - Continuous 1.5 A -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics * Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 110 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 10 ICBO Collector Cutoff Current VCB = 120V, IE = 0 ICES Collector Cutoff Current IEBO Emitter Cut-off Current V 10 nA VCE = 120V, IE = 0 10 nA VEB = 8.0V, IC = 0 100 nA On Characteristics * hFE DC Current Gain VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A 2000 5000 2000 300 200 100K VCE(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA 1 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 1.0mA 1.8 V VBE(on) Base-Emitter On Voltage IC = 1.0A, VCE = 5.0V 1.7 V Small Signal characteristics fT Transition Frequency * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2006 Fairchild Semiconductor Corporation NZT605 Rev. C IC = 100mA, VCE = 10V, f = 20MHz 1 150 MHz www.fairchildsemi.com NZT605 NPN Darlington Transistor January 2007 Ta = 25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient * Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 2 NZT605 Rev. C Max. Units 1,000 8.0 mW mW/°C 125 °C/W 6cm2 www.fairchildsemi.com NZT605 NPN Darlington Transistor Thermal Characteristics NZT605 NPN Darlington Transistor Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters 3 NZT605 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 4 NZT605 Rev. C www.fairchildsemi.com NZT605 NPN Darlington Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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