NZT651

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Emitter Ordering Information Part Number Marking Package Packing Method NZT651 651 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V Collector Current - Continuous 4.0 A -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation NZT651 Rev. 1.1.0 www.fairchildsemi.com NZT651 — NPN Current Driver Transistor November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit 1.2 W Derate Above 25°C 9.7 mW/°C Thermal Resistance, Junction-to-Ambient 103 °C/W Total Power Dissipation Note: 3. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V V(BR)EBO 5.0 Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 100 nA IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 0.1 μA hFE DC Current Gain(4) IC = 50 mA, VCE = 2.0 V 75 IC = 500 mA, VCE = 2.0 V 75 IC = 1.0 A, VCE = 2.0 V 75 IC = 2.0 A, VCE = 2.0 V 40 V VCE(sat) Collector-Emitter Saturation Voltage(4) IC = 1.0 A, IB = 100 mA VBE(sat) Base-Emitter Saturation Voltage(4) IC = 1.0 A, IB = 100 mA 1.2 V VBE(on) Base-Emitter On Voltage(4) IC = 1.0 A, VCE = 2.0 V 1.0 V Current Gain - Bandwidth Product IC = 50 mA, VCE = 5.0 V, f = 100 MHz fT 0.3 IC = 2.0 A, IB = 200 mA 0.5 75 V MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation NZT651 Rev. 1.1.0 www.fairchildsemi.com 2 NZT651 — NPN Current Driver Transistor Thermal Characteristics(3) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 200 V CE= 5V 25 °C 50 - 40 ºC 0 0.01 I C- 0.1 1 COLLECTOR CURRENT (A) 10 - 40 ºC 0.8 25 °C 125 °C 0.4 β = 10 0.2 0.01 IC - 40 ºC 0.1 1 - COLLECTOR CURRENT (A) 0 0.01 I C 125 °C 0.1 1 - COLLECTOR CURRENT (A) 10 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current 1 0.6 25 °C 1 0.5 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) 2 1.5 100 Figure 1. Typical Pulsed Current Gain vs. Collector Current 10 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current ICBO- COLLECTOR CURRENT (nA) β = 10 2.5 125 °C 150 3 1.4 1.2 1 - 40 ºC 0.8 0.6 0.4 25 °C 125 °C V CE = 5V 0.2 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 4. Base-Emitter On Voltage vs. Collector Current 100 VCB = 50V 10 1 0.1 0.01 25 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) 150 Figure 6. Junction Capacitance vs. Reverse Bias Voltage Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation NZT651 Rev. 1.1.0 www.fairchildsemi.com 3 NZT651 — NPN Current Driver Transistor Typical Performance Characteristics NZT651 — NPN Current Driver Transistor Typical Performance Characteristics (Continued) P D - POWER DISSIPATION (W) 1.2 1 SOT-223 0.8 0.6 0.4 0.2 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 7. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation NZT651 Rev. 1.1.0 www.fairchildsemi.com 4 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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