ONSSBAS16XV2T1G

BAS16XV2 Switching Diode Features • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating www.onsemi.com 1 CATHODE Value Unit Continuous Reverse Voltage VR 100 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 500 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM SOD−523 CASE 502 1 Junction and Storage Temperature 2 A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 4.0 1.0 0.5 Device Package Shipping† BAS16XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel BAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel SBAS16XV2T1G SOD−523 (Pb−Free) 3000 /T ape & Reel SBAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient A6 MG G A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C MARKING DIAGRAM 2 1 Symbol Characteristic 2 ANODE Symbol Max Unit PD 200 mW 1.57 mW/°C RθJA 635 °C/W TJ, Tstg −55 to 150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR-5 Minimum Pad. © Semiconductor Components Industries, LLC, 2014 August, 2018 − Rev. 9 1 Publication Order Number: BAS16XV2T1/D BAS16XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 100 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) mA IR Reverse Breakdown Voltage (IBR = 100 mA) V(BR) V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR − 1.75 V Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10mA to VR = 5.0V, RL = 500 Ω) QS − 45 pC 820 Ω +10 V 2.0 k 100 μH tr 0.1 μF IF tp t IF trr 10% t 0.1 μF 90% D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS16XV2 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 8 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502−01 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 GENERIC MARKING DIAGRAM* SIDE VIEW 2X XX L 1 XX 2 1 STYLE 1 2X XX M L2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE = Specific Device Code Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 1.80 0.48 2 STYLE 2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. BOTTOM VIEW 2X M b 0.08 1 M 2X DATE 28 SEP 2010 2X STYLE 2: NO POLARITY 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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