0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
P6KE100AG

P6KE100AG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    轴向

  • 描述:

    TVS DIODE 85.5VWM 137VC AXIAL

  • 数据手册
  • 价格&库存
P6KE100AG 数据手册
P6KE6.8A Series Zener Transient Voltage Suppressors Unidirectional and Bidirectional The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The P6KE6.8A series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: • • • • • • • Standard Zener Voltage Range — 6.8 to 200 V Peak Power — 600 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V Maximum Temperature Coefficient Specified UL Recognition Response Time is Typically < 1 ns http://onsemi.com SURMETIC–40 ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 6.8–200 VOLTS 600 WATT PEAK POWER 5 WATTS STEADY STATE PLASTIC CASE 17 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea ORDERING INFORMATION Device Package Shipping P6KEXXXA CASE 17 1000 Units/Box P6KEXXXARL CASE 17 Tape and Reel 4000 Units/Reel P6KEXXXCA Bidirectional CASE 17 1000 Units/Box P6KEXXXCARL Bidirectional CASE 17 Tape and Reel 4000 Units/Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (1) @ TL ≤ 25°C PPK 600 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C PD 5 Watts 50 mW/°C IFSM 100 Amps TJ, Tstg – 55 to +150 °C Forward Surge Current (2) @ TA = 25°C Operating and Storage Temperature Range Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C NOTES: 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  Semiconductor Components Industries, LLC, 1999 December, 1999 – Rev. 2 1 Publication Order Number: P6KE6.8A/D P6KE6.8A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 50 A (except bidirectional devices). Breakdown Voltage* Min Nom Max @ IT (mA) Working Peak Reverse Voltage VRWM (Volts) P6KE6.8A P6KE7.5A P6KE8.2A P6KE9.1A 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 5.8 6.4 7.02 7.78 1000 500 200 50 57 53 50 45 10.5 11.3 12.1 13.4 0.057 0.061 0.065 0.068 P6KE10A P6KE11A P6KE12A P6KE13A 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 8.55 9.4 10.2 11.1 10 5 5 5 41 38 36 33 14.5 15.6 16.7 18.2 0.073 0.075 0.078 0.081 P6KE15A P6KE16A P6KE18A P6KE20A 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 12.8 13.6 15.3 17.1 5 5 5 5 28 27 24 22 21.2 22.5 25.2 27.7 0.084 0.086 0.088 0.09 P6KE24A P6KE27A P6KE30A 22.8 25.7 28.5 24 27 30 25.2 28.4 31.5 1 1 1 20.5 23.1 25.6 5 5 5 18 16 14.4 33.2 37.5 41.4 0.094 0.096 0.097 P6KE33A P6KE36A P6KE39A P6KE43A 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 28.2 30.8 33.3 36.8 5 5 5 5 13.2 12 11.2 10.1 45.7 49.9 53.9 59.3 0.098 0.099 0.1 0.101 P6KE47A P6KE51A P6KE56A P6KE62A 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 40.2 43.6 47.8 53 5 5 5 5 9.3 8.6 7.8 7.1 64.8 70.1 77 85 0.101 0.102 0.103 0.104 P6KE68A P6KE75A P6KE82A P6KE91A 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 58.1 64.1 70.1 77.8 5 5 5 5 6.5 5.8 5.3 4.8 92 103 113 125 0.104 0.105 0.105 0.106 P6KE100A P6KE120A P6KE130A 95 114 124 100 120 130 105 126 137 1 1 1 85.5 102 111 5 5 5 4.4 3.6 3.3 137 165 179 0.106 0.107 0.107 P6KE150A P6KE170A P6KE180A P6KE200A 143 162 171 190 150 170 180 200 158 179 189 210 1 1 1 1 128 145 154 171 5 5 5 5 2.9 2.6 2.4 2.2 207 234 246 274 0.108 0.108 0.108 0.108 VBR (Volts) Device Maximum Reverse Leakage @ VRWM IR (µA) Maximum Reverse Surge Current IRSM (Amps) Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts) Maximum Temperature Coefficient of VBR (%/°C) Devices listed in bold, italic are ON Semiconductor Preferred devices. *** VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent. *** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  Surge current waveform per Figure 4 and derate per Figure 2.* FOR BIDIRECTIONAL APPLICATIONS — USE CA SUFFIX for P6KE6.8CA through P6KE200CA. Electrical characteristics apply in both directions. Preferred Bidirectional Devices — P6KE7.5CA P6KE11CA P6KE22CA P6KE27CA http://onsemi.com 2 P6KE20CA P6KE30CA PP, PEAK POWER (kW) 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 10 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA= 25°C P6KE6.8A Series 100 1 0.1 0.1µs 1µs 10µs 100µs 1ms 80 60 40 20 0 10ms 0 25 50 75 100 Figure 1. Pulse Rating Curve PEAK VALUE IRSM 100 MEASURED @ ZERO BIAS VALUE (%) C, CAPACITANCE (pF) 10,000 10 50 10 100 VBR, BREAKDOWN VOLTAGE (VOLTS) 0 1000 0 1 2 3 t, TIME (ms) 4 Figure 4. Pulse Waveform 1 0.7 0.5 3/8″ 0.3 3/8″ DERATING FACTOR PD , STEADY STATE POWER DISSIPATION (WATTS) Figure 3. Capacitance versus Breakdown Voltage 4 3 2 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 µs 0.02 1 0 IRSM 2 tP 1 5 0.01 0 25 50 200 PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr ≤ 10µs HALF VALUE - MEASURED @ STANDOFF VOLTAGE (VR) 0.1 175 Figure 2. Pulse Derating Curve tr 100 150 TA, AMBIENT TEMPERATURE (°C) tP, PULSE WIDTH 1000 125 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 200 Figure 5. Steady State Power Derating 10 µs 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 Figure 6. Typical Derating Factor for Duty Cycle http://onsemi.com 3 100 P6KE6.8A Series APPLICATION NOTES RESPONSE TIME minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure A. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure B. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The P6KE6.8A series has very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. http://onsemi.com 4 P6KE6.8A Series TYPICAL PROTECTION CIRCUIT Zin LOAD Vin V V Vin (TRANSIENT) VL OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. http://onsemi.com 5 P6KE6.8A Series UL RECOGNITION Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage http://onsemi.com 6 P6KE6.8A Series OUTLINE DIMENSIONS Transient Voltage Suppressors — Axial Leaded 600 Watt Peak Power B NOTE: 1. LEAD DIAMETER & FINISH NOT CONTROLLED WITHIN DIM F. D K 2 DIM A B D F K F A INCHES MIN MAX 0.330 0.350 0.130 0.145 0.037 0.043 0.050 1.000 1.250 MILLIMETERS MIN MAX 8.38 8.89 3.30 3.68 0.94 1.09 1.27 25.40 31.75 STYLE 1: PIN 1. ANODE 2. CATHODE 1 F K CASE 17-02 PLASTIC (Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.) http://onsemi.com 7 P6KE6.8A Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800–4422–3781 Email: ONlit–asia@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (M–F 2:30pm to 5:00pm Munich Time) Email: ONlit–german@hibbertco.com French Phone: (+1) 303–308–7141 (M–F 2:30pm to 5:00pm Toulouse Time) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549 Phone: 81–3–5487–8345 Email: r14153@onsemi.com Fax Response Line: 303–675–2167 800–344–3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 1N6267A/D
P6KE100AG 价格&库存

很抱歉,暂时无法提供与“P6KE100AG”相匹配的价格&库存,您可以联系我们找货

免费人工找货
P6KE100AG
    •  国内价格 香港价格
    • 1+4.482561+0.54120
    • 5100+4.437005100+0.53570
    • 25500+4.4005625500+0.53130
    • 51000+4.3914551000+0.53020
    • 255000+4.39145255000+0.53020

    库存:510