PCP1208-TD-H

Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE(sat) NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit 220 V 200 V 8 V 0.7 A Collector Current (Pulse) VEBO IC ICP Base Current IB 140 Collector Dissipation PC Collector Current Junction Temperature Tj Storage Temperature Tstg 2 A mA When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Device PCP1208-TD-H Top View PCP1208-TD-H 4.5 1.6 2.5 1.0 Shipping note PCP (SC-62, SOT-89, TO-243) 1,000 pcs./reel Pb Free and Halogen Free Packing Type: TD 4.0 1.5 Package TD 1 2 Marking LOT No. unit : mm (typ) 7008B-003 QO Package Dimensions 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 May, 2013 52213 TKIM TC-00002872/72512 TKIM/12611CB TKIM TC-00002563 No.1836-1/7 PCP1208 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=100V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=100mA VCE=10V, IC=100mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=0.35A, IB=35mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ 200 IC=10μA, IE=0A IC=1mA, RBE=∞ V(BR)EBO ton IE=10μA, IC=0A tstg tf See specified Test Circuit. 1 μA 1 μA 560 120 MHz 9 IC=0.35A, IB=35mA V(BR)CBO V(BR)CEO Unit max pF 115 200 0.82 1.2 mV V 220 V 200 V 8 V 50 ns 2 μs 70 ns Switching Time Test Circuit PW=50μs D.C.≤1% IB1 OUTPUT IB2 INPUT RB RL 50Ω + 820μF VCC=100V IC=10IB1= --10IB2=0.3A No.1836-2/7 PCP1208 IC -- VCE 80mA 0.18 0.16 0.6 60mA 50mA 40mA 30mA 0.5 20mA 0.8 0.7 0.4 0.3 8mA 6mA 4mA Collector Current, IC -- A Collector Current, IC -- A 0.9 10mA 0.2 2mA IB=0mA 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V IC -- VBE 0.8 300μA 200μA 0.08 0.06 100μA 0.04 IB=0μA 0 1 2 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 2.0 V .0V V =5 E V VC 0.5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A Cob -- VCB 100 10 7 5 3 2 2 3 10 7 5 2 3 5 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 IT15958 7 0.1 2 3 5 7 1.0 IT15955 fT -- IC VCE=10V 5 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A VCE(sat) -- IC 1.0 7 1.0 IT15957 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 7 1.0 3 2 10 0.01 1.0 IT15956 3 3 10 IT15953 VCE=5V 7 7 5 2 9 Collector Current, IC -- A f=1MHz 7 1.0 0.1 8 25°C --25°C 1000 1.0 100 7 5 7 100 7 5 1.0 0.01 1.0 Ta=25°C 3 2 6 Ta=75°C IT15954 hFE -- IC 100 7 5 5 3 2 Gain-Bandwidth Product, fT -- MHz 0 4 hFE -- IC 1000 7 5 DC Current Gain, hFE 0.2 400μA μA Collector-to-Emitter Voltage, VCE -- V --25°C 5°C 25°C 0.3 Ta= 7 Collector Current, IC -- A 0.4 500μA A 3 2 0.5 700 μA 0.10 IT15952 0.6 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE 1m 0.12 0 1.0 VCE=5V 0.1 Output Capacitance, Cob -- pF 0.14 600 0.02 0.7 0 IC -- VCE 0.20 100mA 90 0μ A8 00 μA 1.0 5 3 2 0.1 5°C 7 7 Ta= 5 °C --25 3 C 25° 2 0.01 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT15959 No.1836-3/7 PCP1208 VCE(sat) -- IC 1.0 7 5 3 2 ° Ta=75 0.1 7 5 --25°C 0.01 0.01 2 3 5 7 C 25°C 3 2 2 0.1 3 5 Collector Current, IC -- A 1m 10 IC=0.7A 0m s s μs 100 0.01 7 5 3 2 2 2 3 5