Ordering number : ENA2227
PCP1302
P-Channel Power MOSFET
−60V, −3A, 266mΩ, Single PCP
http://onsemi.com
Features
• On-resistance RDS(on)1=200mΩ(typ.)
• 4V drive
• Halogen free compliance
• Protection Diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
VDSS
−60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
−3
A
Drain Current (Pulse)
IDP
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
−12
A
Tc=25°C
3.5
W
When mounted on ceramic substrate (600mm2×0.8mm)
1.3
W
150
°C
− 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm2×0.8mm)
Value
Unit
RθJC
35.7
°C /W
RθJA
96.1
°C /W
Electrical Characteristics at Ta = 25°C
Value
Parameter
Symbol
Conditions
Unit
min
typ
−60
Drain to Source Breakdown Voltage
V(BR)DSS
ID=−1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=−60V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±20V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=−10V, ID=−1mA
Forward Transconductance
gFS
VDS=−10V, ID=−1.5A
3.2
RDS(on)1
ID=−1.5A, VGS=−10V
RDS(on)2
RDS(on)3
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
max
V
−1
μA
±10
μA
−2.6
V
200
266
mΩ
ID=−1A, VGS=−4.5V
245
334
mΩ
ID=−1A, VGS=−4V
260
374
mΩ
VDS=−20V, f=1MHz
−1.2
S
262
pF
29
pF
19
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
61614 TKIM TC-00003133 No. A2227-1/5
PCP1302
Continued from preceding page.
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
21
ns
Total Gate Charge
Qg
6.4
nC
Gate to Source Charge
Qgs
0.8
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
5.1
ns
6.0
ns
34
ns
See specified Test Circuit.
VDS=−30V, VGS=−10V, ID=−3A
1.4
−0.9
IS=−3A, VGS=0V
nC
−1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package
Shipping
note
PCP1302-TD-H
PCP, SC-62
SOT-89, TO-243
1,000
pcs. / reel
Pb-Free
And
Halogen Free
Electrical Connection
Marking
LOT No.
Packing Type:TD
Device
TD
Ordering & Package Information
Switching Time Test Circuit
2
1
3
No.A2227-2/5
PCP1302
No.A2227-3/5
PCP1302
No.A2227-4/5
PCP1302
Package Dimensions
PCP1302-TD-H
SOT-89/PCP-1
CASE 419AU
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Recommended Soldering
Footprint
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
Note on usage : Since the PCP1302 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as
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PS No.A2227-5/5
