PN2369_D26Z

PN2369 PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 15 Units V VCBO VEBO Collector-Base Voltage 40 V Emitter-Base Voltage 4.5 IC Collector Current V 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C - Continuous * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V(BR)CES Collector-Emitter Breakdown Voltage IC = 10µA, VBE = 0 40 V V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4.5 ICBO Collector Cutoff Current VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125°C V 0.4 30 µA µA On Characteristics hFE DC Current Gain * IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 40 20 120 0.25 V 0.7 0.85 V Small Signal Characteristics Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 5.0 pF hfe Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ, f = 100MHz ns 5.0 Switching Characteristics ts Storage Time IB1 = IB2 = IC = 10mA 13 ton Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns toff Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA, IB2 = 1.5mA 18 ns * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A, January 2004 Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 350 2.8 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, January 2004 PN2369 Thermal Characteristics Ta=25°C unless otherwise noted PN2369 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, January 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I6