PN2907ATA

DATA SHEET www.onsemi.com PNP General-Purpose Transistor PN2907 E B C TO−92 3 4.825x4.76 CASE 135AN Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant. MARKING DIAGRAM APN 2907 YWW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VCEO Collector−Emitter Voltage −40 V VCBO Collector−Base Voltage −60 V VEBO Emitter−Base Voltage −5.0 V IC Collector Current − Continuous −800 mA TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty cycle operations. PN2907 A Y WW = Specific Device Code = Assembly Site = Year of Production = Work Week Number ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max (Note 3) Unit Total Device Dissipation 625 mW Derate Above 25°C 5.0 mW/°C RqJC Thermal Resistance, Junction to Case 83.3 °C/W RqJA Thermal Resistance, Junction to Ambient 200 °C/W Symbol PD Parameter 3. PCB size: FR−4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 1997 August, 2022 − Rev. 4 1 Publication Order Number: PN2907/D PN2907 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Max Unit OFF CHARACTERISTICS V(BR)CEO Collector−Emitter Breakdown Voltage (Note 4) IC = −10 mA, IB = 0 −40 − V V(BR)CBO Collector−Base Breakdown Voltage IC = −10 mA, IE = 0 −60 − V V(BR)EBO Emitter−Base Breakdown Voltage IE = −10 mA, IC = 0 −5.0 − V Collector Cut−Off Current VCE = −30 V, VEB = −0.5 V − −50 nA Base Cut−Off Current VCE = −30 V, VEB = −0.5 V − −50 nA Collector Cut−Off Current VCB = −50 V, IE = 0 − −20 nA VCB = −50 V, IE = 0, TA = 150°C − −20 mA VCE = −10 V, IC = −0.1 mA 35 − VCE = −10 V, IC = −1.0 mA 50 − ICEX IBL ICBO ON CHARACTERISTICS (Note 4) hFE DC Current Gain VCE(sat) Collector−Emitter Saturation Voltage VBE(sat) Base−Emitter Saturation Voltage VCE = −10 V, IC = −10 mA 70 − VCE = −10 V, IC = −150 mA 100 300 VCE = −10 V, IC = −500 mA 30 − IC = −150 mA, IB = −15 mA − −0.4 IC = −500 mA, IB = −50 mA − −1.6 IC = −150 mA, IB = −15 mA − −1.3 IC = −500 mA, IB = −50 mA − −2.6 V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = −10 V, f = 1.0 MHz − 8 pF Cib Input Capacitance VEB = −2.0 V, f = 1.0 MHz − 30 pF hfe Small−Signal Current Gain IC = −50 mA, VCE = −20 V, f = 100 MHz 2 − VCC = −30 V, IC = −150 mA, IB1 = −15 mA − 45 ns − 10 ns − 40 ns − 100 ns − 80 ns − 30 ns SWITCHING CHARACTERISTICS ton Turn−On Time td Delay Time tr Rise Time toff Turn−Off Time ts Storage Time tf Fall Time VCC = −6.0 V, IC = −150 mA, IB1 = IB2 = −15 mA 4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%. ORDERING INFORMATION Part Number PN2907BU Top Mark Package Shipping PN2907 TO−92 3 4.825x4.76 (Pb−Free) 10000 Units / Bulk †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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