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PN2907 / MMBT2907 — PNP General-Purpose Transistor
PN2907 / MMBT2907
PNP General-Purpose Transistor
Description
This device is designed for use with general-purpose
amplifiers and switches requiring collector currents to
500 mA. Sourced from process 63.
PN2907
MMBT2907
C
E
TO-92
SOT-23
Mark:2B
EBC
B
Ordering Information
Part Number
Top Mark
Package
Packing Method
PN2907BU
PN2907
TO-92 3L
Bulk
MMBT29070-D87Z
2B
SOT-23 3L
Tape and Reel
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
PN2907/D
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
-800
mA
-55 to +150
°C
IC
TJ, TSTG
Parameter
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Parameter
PN2907(3)
MMBT2907(4)
Unit
Total Device Dissipation
625
350
mW
Derate Above 25°C
5.0
2.8
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
PD
°C/W
357
Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.
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2
°C/W
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Absolute Maximum Ratings(1),(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0
IC = -10 μA, IE = 0
V(BR)CBO Collector-Base Breakdown Voltage
-40
V
-60
V
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5.0
V
Collector Cut-Off Current
VCE = -30 V, VEB = -0.5 V
-50
nA
Base Cut-Off Current
VCE = -30 V, VEB = -0.5 V
-50
nA
V(BR)EBO
ICEX
IBL
ICBO
Collector Cut-Off Current
VCB = -50 V, IE = 0
-20
nA
VCB = -50 V, IE = 0, TA = 150°C
-20
μA
On Characteristics(5)
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VCE = -10 V, IC = -0.1 mA
35
VCE = -10 V, IC = -1.0 mA
50
VCE = -10 V, IC = -10 mA
70
VCE = -10 V, IC = -150 mA
100
VCE = -10 V, IC = -500 mA
30
300
IC = -150 mA, IB = -15 mA
-0.4
IC = -500 mA, IB = -50 mA
-1.6
IC = -150 mA, IB = -15 mA
-1.3
IC = -500 mA, IB = -50 mA
-2.6
V
V
Small Signal Characteristics
Cob
Output Capacitance
VCB = -10 V, f = 1.0 MHz
8
pF
Cib
Input Capacitance
VEB = -2.0 V, f = 1.0 MHz
30
pF
hfe
Small-Signal Current Gain
IC = -50 mA, VCE = -20 V,
f = 100 MHz
45
ns
10
ns
40
ns
100
ns
80
ns
30
ns
2
Switching Characteristics
ton
Turn-On Time
td
Delay Time
tr
Rise Time
toff
Turn-Off Time
ts
Storage Time
tf
Fall Time
VCC = -30 V, IC = -150 mA,
IB1 = -15 mA
VCC = -6.0 V, IC = -150 mA,
IB1 = IB2 = -15mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Electrical Characteristics
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Physical Dimensions
TO-92 (Bulk)
D
Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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4
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
0.25
0.20 MIN
(0.55)
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 2. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
5
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Physical Dimensions (Continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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