PN3646_D75Z

PN3646 PN3646 NPN Switching Transistor • Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCBO VEBO Collector-Base Voltage 40 V Emitter-Base Voltage 5.0 IC Collector Current V 300 mA TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continued * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 BV(BR)CES Collector-Emitter Breakdown Voltage IC = 100µA, VBE = 0 40 V V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 ICES Collector Cutoff Current VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C V µA µA 0.5 3.0 On Characteristics * hFE DC Current Gain VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA VCE(sat) Collector-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA VBE(sat) Base-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA 30 25 15 0.73 120 0.2 0.28 0.5 V V V 0.95 1.2 1.7 V V V Small Signal Characteristics Ccb Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1MHz 5.0 pF Ceb Emitter-Base Capacitance VCB = 5.0V, IC = 0, f = 1MHz 8.0 pF hfe Small-Signal Current Gain IC = 300mA, VCE = 10V, f = 100MHz 3.5 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 Symbol Parameter Switching Characteristics ts Storage Time ton Turn-On Time toff Turn-Off Time (Continued) Test Condition Min. IC = 300mA, VCC = 10V IB1 = IB2 = 30mA Max. Units 20 ns 18 ns 28 ns Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Total Device Dissipation Derate above 25°C Parameter Max. 350 2.8 Units mW mW/°C Thermal Resistance, Junction to Ambient 357 °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 PN3646 Electrical Characteristics Ta=25°C unless otherwise noted PN3646 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13