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PN4117_D26Z

PN4117_D26Z

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO92-3

  • 描述:

    JFET N-CH 40V 0.35W TO92

  • 数据手册
  • 价格&库存
PN4117_D26Z 数据手册
PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 G S G S TO-92 SOT-23 D D Mark: 61A / 61C / 61E NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VDG Drain-Gate Voltage VGS Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN4117-4119 350 2.8 125 *MMBF4117-4119 225 1.8 357 556 mW mW/°C °C/W °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units IG = - 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 150°C 4117 VDS = - 10 V, ID = 1.0 nA 4118 4119 - 40 - 0.6 - 1.0 - 2.0 - 10 - 25 - 1.8 - 3.0 - 6.0 pA nA V V V 4117 4118 4119 30 80 200 90 240 600 µA µA µA 70 80 100 210 250 330 µmhos µmhos µmhos 3.0 5.0 10 µmhos µmhos µmhos 3.0 µmhos µmhos µmhos pF 1.5 pF OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 10 V, VGS = 0 SMALL-SIGNAL CHARACTERISTICS Ciss Input Capacitance VDS = 10 V VGS = 0, f= 1.0 kHz 4117 4118 4119 VDS = 10 V VGS = 0, f= 1.0 kHz 4117 4118 4119 VDS = 10 V, VGS = 0, f= 30 MHz 4117 4118 4119 VDS = 10 V, VGS = 0, f= 1.0 kHz Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0, f= 1.0 MHz, gfs goss Re(yfs) Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forwad Transconductance *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% 60 70 90 PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch 5 (continued) Typical Characteristics Parameter Interactions Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch (continued) Typical Characteristics (continued) Leakage Current vs. Voltage Output Conductance vs. Drain Current Common Drain-Source Capacitance vs. Voltage PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch 5 Transconductance vs. Drain Current Noise Voltage vs. Frequency TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
PN4117_D26Z 价格&库存

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