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MMBF4391 / MMBF4392 / MMBF4393
N-Channel Switch
Description
G
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized
amplifiers. Sourced from process 51. See J111 for
characteristics.
S
SOT-23
D
Note: Source & Drain
are interchangeable
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBF4391
6J
SOT-23 3L
Tape and Reel
MMBF4392
6K
SOT-23 3L
Tape and Reel
MMBF4393
6G
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
Drain-Gate Voltage
30
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
50
mA
-55 to 150
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3
www.fairchildsemi.com
MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch
January 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
350
mW
Derate Above 25°C
2.8
mW/°C
Thermal Resistance, Junction-to-Ambient
357
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
VGS(f)
ID(off)
Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0
Gate Reverse Current
Gate-Source Cut-Off Voltage
Gate-Source Forward Voltage
Drain Cut-Off Leakage Current
-30
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 150°C
VDS = 20 V, ID = 1.0 nA
V
-1.0
nA
-0.2
μA
MMBF4391
-4.0
-10.0
MMBF4392
-2.0
-5.0
MMBF4393
-0.5
-3.0
IG = 1.0 mA, VDS = 0
1.0
VDS = 20 V, VGS = -12 V
MMBF4391
0.1
VDS = 20 V, VGS = -7.0 V
MMBF4392
0.1
VDS = 20 V, VGS = -5.0 V
MMBF4393
0.1
VDS = 20 V, VGS = -12 V,
TA = 150°C
MMBF4391
0.2
VDS = 20 V, VGS = -7.0 V,
MMBF4392
TA = 150°C
0.2
VDS = 20 V, VGS = -5.0 V,
MMBF4393
TA = 150°C
0.2
V
V
nA
μA
On Characteristics
MMBF4391
IDSS
VDS(on)
rDS(on)
Zero-Gate Voltage Drain
Current(4)
Drain-Source On Voltage
Drain-Source On Resistance
VDS = 20 V, VGS = 0
50
150
MMBF4392
25
75
MMBF4393
5.0
30
ID = 12 mA, VGS = 0
MMBF4391
0.4
ID = 6.0 mA, VGS = 0
MMBF4392
0.4
ID = 3.0 mA, VGS = 0
MMBF4393
0.4
MMBF4391
30
ID = 1.0 mA, VGS = 0
MMBF4392
60
MMBF4393
100
mA
V
Ω
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1997 Fairchild Semiconductor Corporation
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3
www.fairchildsemi.com
2
MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Small Signal Characteristics
rds(on)
Ciss
Crss
MMBF4391
30
MMBF4392
60
MMBF4393
100
Drain-Source On Resistance
VDS = VGS = 0, f = 1kHz
Input Capacitance
VDS = 20 V, VGS = 0, f = 1.0 MHz
14
VGS = -12 V, f = 1.0 MHz
MMBF4391
3.5
VGS = -7.0 V, f = 1.0 MHz MMBF4392
3.5
VGS = -5.0 V, f = 1.0 MHz MMBF4393
3.5
Reverse Transfer Capacitance
Ω
pF
pF
Switching Characteristics
tr
tf
ton
toff
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
© 1997 Fairchild Semiconductor Corporation
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3
ID(on) = 12 mA
MMBF4391
5.0
ID(on) = 6.0 mA
MMBF4392
5.0
ID(on) = 3.0 mA
MMBF4393
5.0
VGS(off) = 12 V
MMBF4391
15
VGS(off) = 6.0 V
MMBF4392
20
VGS(off) = 3.0 V
MMBF4393
30
ID(on) = 12 mA
MMBF4391
15
ID(on) = 6.0 mA
MMBF4392
15
ID(on) = 3.0 mA
MMBF4393
15
VGS(off) = 12 V
MMBF4391
20
VGS(off) = 6.0 V
MMBF4392
35
VGS(off) = 3.0 V
MMBF4393
50
ns
ns
ns
ns
www.fairchildsemi.com
3
MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch
Electrical Characteristics (Continued)
MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch
Physical Dimensions
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 1. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3
www.fairchildsemi.com
4
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Rev. I73
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