PZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
• PNP Complement is PZT2907AT1
• The SOT−223 Package Can be Soldered Using Wave or Reflow
• SOT−223 Package Ensures Level Mounting, Resulting in Improved
•
•
•
•
www.onsemi.com
SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
4
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
COLLECTOR
2, 4
BASE
1
3
EMITTER
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
(Open Collector)
VEBO
6.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation
up to TA = 25°C (Note 1)
PD
Storage Temperature Range
Tstg
− 65 to +150
°C
Junction Temperature°Range
TJ
− 55 to +150
°C
W
1.5
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
MARKING DIAGRAM
AYM
P1FG
G
A
= Assembly Location
Y
= Year
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Symbol
Value
Unit
RqJA
83.3
°C/W
TL
260
10
°C
Sec
Thermal Resistance,
Junction−to−Ambient
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Package
Shipping†
PZT2222AT1G
SOT−223
(Pb−Free)
1,000 Tape & Reel
SPZT2222AT1G
SOT−223
(Pb−Free)
1,000 Tape & Reel
PZT2222AT3G
SOT−223
(Pb−Free)
4,000 Tape & Reel
THERMAL CHARACTERISTICS
Rating
3
SOT−223 (TO−261)
CASE 318E−04
STYLE 1
MAXIMUM RATINGS
Rating
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2018 − Rev. 11
1
Publication Order Number:
PZT2222AT1/D
PZT2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
°75°
−
Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
IBEX
−
20
nAdc
Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
ICEX
−
10
nAdc
Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
IEBO
−
100
nAdc
Collector−Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
10
10
nAdc
mAdc
35
50
70
35
100
50
40
−
−
−
−
300
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
2.0
0.25
8.0
1.25
−
−
8.0x10−4
4.0x10−4
50
75
300
375
5.0
25
35
200
−
4.0
300
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
Collector−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hie°
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
ť hfe ť
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hoe°
F
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz)
−
Vdc
Vdc
kW
−
−
mmhos
dB
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
−
8.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce
−
25
pF
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
td
−
10
ns
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = IB(off) = 15 mAdc)
Figure 2
ts
−
225
tf
−
60
SWITCHING TIMES (TA = 25°C)
Delay Time
Rise Time
Storage Time
Fall Time
www.onsemi.com
2
ns
PZT2222A
VCC
Vi
R2
90%
Vo
R1
10%
0
tr
Vi
D.U.T.
tp
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = − 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.
PULSE GENERATOR:
PULSE DURATION
RISE TIME
DUTY FACTOR
OSCILLOSCOPE:
INPUT IMPEDANCE
INPUT CAPACITANCE
RISE TIME
tp 3 200 ns
tr 3
2 ns
d =
0.02
Zi > 100 kW
Ci < 12 pF
tr <
5 ns
VCC
Vi
+16.2 V
R2
D.U.T.
R1
0
R3
Vi
TIME
Vo
OSCILLOSCOPE
D1
R4
-13.8 V
tf
100 ms
VBB
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
TYPICAL CHARACTERISTICS
1.2
1
0.1
0.01
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 25°C
TA = −55°C
TA = 150°C
0.1
1
10
100
1000
IC/IB = 10
1.0
TA = −55°C
0.9
0.8
0.7
TA = 25°C
0.6
0.5
0.4
0.3
0.2
TA = 150°C
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
www.onsemi.com
3
PZT2222A
TYPICAL CHARACTERISTICS
2.0
100
1.1
1.0
TA = −55°C
0.1
1
10
100
1000
0.3
0.2
600 mA
300 mA
100 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Figure 5. DC Current Gain vs. Collector
Current
Figure 6. Saturation Region
100
100
VCE = 2 V
C, CAPACITANCE (pF)
TA = 25°C
0.5
0.4
1.4
IB, BASE CURRENT (mA)
0.8
0.6
1.6
IC, COLLECTOR CURRENT (mA)
0.9 TA = −55°C
0.7
TA = 25°C
1.8
10 mA
TA = 25°C
10
VBE(ON), BASE−EMITTER ON VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
TA = 150°C
Cibo
Cobo
10
TA = 150°C
0.1
1
10
100
1
1000
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 8. Capacitance
1000
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
VCE = 6 V
IC = 1 mA
1000
0.0001
1s
0.1
0.01
100
0.001
10
Single Pulse Test at TA = 25°C
1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
www.onsemi.com
4
100
100
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative