QED123

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This literature is subject to all applicable copyright laws and is not for resale in any manner. QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description ■ λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs ■ Package type: T-1 3/4 (5mm lens diameter) ■ Matched photosensor: QSD122/QSD123/QSD124 ■ Narrow emission angle, 16° ■ High output power ■ Package material and color: clear, peach tinted, plastic Package Dimensions 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN CATHODE 0.050 (1.25) 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) Schematic ANODE CATHODE 0.020 (0.51) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 www.fairchildsemi.com QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode August 2008 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating Units TOPR Operating Temperature -40 to +100 °C TSTG Storage Temperature -40 to +100 °C TSOL-I Soldering Temperature (Iron)(2)(3)(4) 240 for 5 sec °C 260 for 10 sec °C 100 mA TSOL-F IF Soldering Temperature (Flow)(2)(3) Continuous Forward Current VR Reverse Voltage PD Power Dissipation(1) 5 V 200 mW Notes: 1. Derate power dissipation linearly 2.67mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical / Optical Characteristics (TA = 25°C) Symbol Parameter λPE Peak Emission Wavelength TCλ Temperature Coefficient Test Conditions IF = 20mA 2Θ1/2 Emission Angle IF = 100mA VF Forward Voltage IF = 100mA, tp = 20ms TCVF Min. Typ. Max. 890 nm 0.2 nm / °C 16 ° 1.7 Temperature Coefficient Units -6 V mV / °C IR Reverse Current VR = 5V 10 µA IE Radiant Intensity QED121 IF = 100mA, tp = 20ms 16 40 mW/sr IE Radiant Intensity QED122 IF = 100mA, tp = 20ms 32 100 mW/sr IE Radiant Intensity QED123 IF = 100mA, tp = 20ms 50 TCIE Temperature Coefficient tr Rise Time tf Fall Time Cj Junction Capacitance ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 IF = 100mA VR = 0V 70 mW/sr -0.3 % / °C 900 ns 800 ns 11 pF www.fairchildsemi.com 2 QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Figure 1. Normalized Intensity vs. Wavelength Figure 2. Peak Wavelength vs. Ambient Temperature 1.0 λPE – PEAK EMISSION WAVELENGTH 910 NORMALIZED INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 700 750 800 850 900 950 1,000 IF = 20mA DC 908 906 904 902 900 898 896 894 1,050 0 10 20 λ (nm) Ie – NORMALIZED RADIANT INTENSITY Ie – NORMALIZED RADIANT INTENSITY 1 0.1 10 60 100 80 70 90 100 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -15 1000 Normalized to: IF = 20mA Pulsed tPW = 20mS Duty Cycle = 4% TA = 25°C 0 15 30 45 60 75 90 105 TA – AMBIENT TEMPERTURE (°C) IF – FORWARD CURRENT (mA) Figure 6. Forward Voltage vs. Ambient Temperature Figure 5. Forward Voltage vs. Forward Current 5.0 2.1 IF Pulsed tPW = 20mS Duty Cycle = 4% TA = 25°C VF – FORWARD VOLTAGE (V) VF – FORWARD VOLTAGE (V) 50 1.3 Normalized to: IF = 100mA Pulsed tPW = 20mS Duty Cycle = 4% TA = 25°C 3.0 2.0 1.0 0.0 10 40 Figure 4. Normalized Radient Intensity vs. Ambient Temperature Figure 3. Normalized Radiant Intensity vs. Forward Current 10 4.0 30 TA – AMBIENT TEMPERTURE (°C) 100 1.8 1.7 1.6 0 15 30 45 60 75 90 105 TA – AMBIENT TEMPERTURE (°C) IF – FORWARD CURRENT (mA) ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 1.9 1.5 -15 1000 IF = 20mA Pulsed tPW = 20mS Duty Cycle = 4% 2.0 www.fairchildsemi.com 3 QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode Typical Performance Curves Figure 8. Coupling Characteristics of QED12X and QSD12X 110° 100° 90° 80° 70° 120° 60° 130° 50° 140° 40° 150° 30° 160° 20° 170° 180° 1.0 IC (ON) – NORMALIZED COLLECTOR CURRENT Figure 7. Radiation Diagram 10° 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0° 1.0 1.0 Normalized to: d = 0 inch Pulse Width = 100µs Duty Cycle = 0.1% VCC = 5V RL = 100Ω TA = 25°C 0.8 0.6 IF = 100mA 0.4 IF = 20mA 0.2 0.0 0 1 2 3 4 5 6 LENS TIP SEPARATION (inches) ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 www.fairchildsemi.com 4 QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode Typical Performance Curves (Continued) Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ PDP SPM™ Power-SPM™ ® The Power Franchise TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 www.fairchildsemi.com 5 QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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