QRB1113

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 PACKAGE DIMENSIONS 0.420 (10.67) E 0.328 (8.33) S 0.150 (3.81) NOM PIN 1 E PIN 2 0.373 (9.47) 0.226 (5.74) S PIN 3 0.703 (17.86) PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) 0.300 (7.62) 0.210 (5.33) SCHEMATIC REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 2 4 3 DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter. FEATURES • No contact surface sensing • Phototransistor output • Focused for sensing specular reflection • Daylight filter on photosensor • Dust cover © 2002 Fairchild Semiconductor Corporation Page 1 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Symbol Rating Units TOPR -40 to +85 °C TSTG -40 to +85 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature EMITTER (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V PD 100 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 4.5 V 20 mA 100 mW Storage Temperature Dissipation(1) Power SENSOR Collector Current Power Dissipation(1) PD NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. D is the distance from the assembly face to the reflective surface. 6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface. 7. Cross talk is the photo current measured with current to the input diode and no reflecting surface. ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C) Parameter Test Conditions Symbol Min. Typ. Max. Units Forward Voltage IF = 40 mA VF — — 1.7 V Reverse Current VR = 5.0 V IR — — 100 µA Peak Emission Wavelength IF = 20 mA λPE — 940 — nm IC = 1 mA BVCEO 30 — — V IE = 0.1 mA BVECO 5 — — V VCE = 10 V, IF = 0 mA ICEO — — 100 nA IC(ON) 0.20 0.60 — — — mA IF = 20 mA, IC = 0.5 mA VCE (SAT) — — 0.4 V VCE = 5 V, RL = 100 V IC(ON) = 5 mA tr — 8 — Fall Time tf — 8 — Cross Talk IF = 40 mA, VCE = 5 V(7) ICX — — 1.00 EMITTER SENSOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current COUPLED On-state Collector Current QRB1113 QRB1114 Collector-Emitter Saturation Voltage Rise Time © 2002 Fairchild Semiconductor Corporation IF = 40 mA, VCE = 5 V D = .150"(5,6) Page 2 of 4 µs µA 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 TYPICAL PERFORMANCE CURVES Fig. 1 Forward Voltage vs. Forward Current Fig. 2 Normalized Collector Current vs. Forward Current 1.60 VF - FORWARD VOLTAGE (V) 1.20 1.00 0.80 0.60 0.40 1.00 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) 10.0 1.40 1.00 0.10 0.01 VCE = 5 V D = .05" 0.1 1.0 10 100 0.0 IF - FORWARD CURRENT (mA) 10 20 30 40 NORMALIZED COLLECTOR CURRENT (mA) VCE = 10 V 10 1.0 10-1 10-2 10-3 0 25 50 75 0.2 IF = 10 m,A VCE = 5 V 50 -50 -25 0 25 50 75 TA - AMBIENT TEMPERATURE (˚C) 1.0 0.9 IF = 20 m,A VCE = 5 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 -25 0.4 Fig. 5 Normalized Collector Current vs. Distance 102 50 0.6 IF - FORWARD CURRENT (mA) Fig. 4 Normalized Collector Dark Current vs. Temperature 101 0.8 0 .001 0.20 ICEO - COLLECTOR DARK CURRENT Fig. 3 Normalized Collector Current vs. Temperature 50 100 150 200 250 300 350 400 450 500 100 DISTANCE IN MILS TA - AMBIENT TEMPERATURE (˚C) © 2002 Fairchild Semiconductor Corporation Page 3 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 4 of 4 3/5/02 DS300350