QSB320TR

QSB320TR Surface Mount Silicon Infrared Phototransistor Features Descriptions • • • • QSB320TR is a phototransistor in surface mount PLCC2 Package. Surface Mount PLCC-2 Package Wide Reception Angle, 120° High Sensitivity Phototransistor Output Package Dimensions(1, 2) 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) 0.043 (1.1) 0.020 (0.5) COLLECTOR 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) COLLECTOR EMITTER Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. © 2001 Fairchild Semiconductor Corporation QSB320TR Rev. 1.2 www.fairchildsemi.com 1 QSB320TR — Surface Mount Silicon Infrared Phototransistor March 2016 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit TOPR Operating Temperature -55 to +100 C TSTG Storage Temperature -55 to +100 C 260 for 10 sec C TSOL-F Soldering Temperature (Flow) (4, 5) VCE Collector Emitter Voltage 35 V VEC Emitter Collector Voltage 5 V Collector Current 15 mA 165 mW IC PD (3) Power Dissipation Notes: 3. Derate power dissipation linearly 2.2 mW/°C above 25°C. 4. RMA flux is recommended. 5. Methanol or isopropyl alcohols are recommended as cleaning agents. Electrical / Optical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter PS Peak Sensitivity Wavelength SR Wavelength Sensitivity Range  Reception Angle lD Conditions Min. Typ. Max. Unit 1000 nm 880 400 nm  120 Collector Emitter Dark Current VCE = 25 V, Ee = 0 BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V BVECO Emitter-Collector Breakdown IE = 100 A 5 V IC(ON) Current(6) On-State Collector Ee = 0.1 mW/cm2, 200 VCE = 5 V Saturation Voltage(6) Ee = 0.5 mW/cm2, IC = 0.05 mA tr Rise Time tf Fall Time IC = 1 mA, VCC = 5 V, RL = 100  VCE(SAT) nA A 16 0.3 V 8 s 8 s Note: 6.  = 940 nm © 2001 Fairchild Semiconductor Corporation QSB320TR Rev. 1.2 www.fairchildsemi.com 2 QSB320TR — Surface Mount Silicon Infrared Phototransistor Absolute Maximum Ratings 10 Normalized to: VCE=25V TA=25oC 102 ID-Dark Current (nA) ID-Normalized Dark Current 103 VCE=25V VCE=10V 101 1 100 10-1 0.1 40 60 80 100 0 10 20 o TA-Ambient Temperature ( C) 30 40 50 60 VCE-Collector Emitter Voltage (V) Figure 1. Dark Current vs. Ambient Temperature Figure 2. Dark Current vs. Collector Emitter Voltage 10 10 Ee=1mW/cm2 IL-Normalized Light Current Ee=0.5mW/cm 2 1 Ee=0.2mW/cm 2 Ee=0.1mW/cm 2 0.1 Normalized to: 0.01 VCE =5V 1 Ee=0.5mW/cm2 =25oC TA 0.001 0.1 0.1 1 Normalized to: V CE =5V Ee=0.5mW/cm22 TA =25oC -40 10 -20 0 20 40 60 80 100 TA-Ambient Temperature ( oC) VCE-Collector-emitter Voltage (V) Figure 3. Light Current vs. Collector to Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage © 2001 Fairchild Semiconductor Corporation QSB320TR Rev. 1.2 www.fairchildsemi.com 3 QSB320TR — Surface Mount Silicon Infrared Phototransistor Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com