QSB34CZR

Features • Daylight Filter (QSB34GR and QSB34ZR Only) • Surface-Mount Packages: – QSB34GR / QSB34CGR for Over-Mount Board – QSB34ZR / QSB34CZR for Under-Mount Board • Fast PIN Photodiode • Wide Reception Angle: 120° • Large Chip Size: 3 mm x 3 mm • Sensitive Area: 2.55 mm x 2.55 mm • High Sensitivity • Low Capacitance • Available in 0.470 inch (12 mm) Width Tape on 7 inch (178 mm) Diameter Reel: 1,000 Units per Reel Schematic ANODE CATHODE Ordering Information Part Number Operating Temperature Package Packing Method -25 to +85°C PLCC 2L Tape and Reel QSB34GR QSB34ZR QSB34CGR QSB34CZR © 2008 Semiconductor Components Industries, LLC. October-2017, Rev. 9 Publication Order Number: QSB34/D QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Surface-Mount Silicon Pin Photodiode Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise specified. Symbol Parameter Min. TOPR Operating Temperature -25 to +85 TSTG Storage Temperature -40 to + 85 TSOL(1) Soldering Temperature 260 VR Reverse Voltage 32 PC Power Dissipation at (or below) 25°C Free Air Temperature 150 Note: 1. Soldering time ≤ 5 s. Recommend IR Reflow Soldering Profile 1 ~ 3°C/s 260°C Max. 10 s Max. 1 ~ 3°C/s Pre-heating 180 ~ 200°C 120 s Max. www.onsemi.com 2 60 s Max. Above 220°C Unit °C V mW QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode Absolute Maximum Ratings Values are at TA = 25°C unless specified otherwise. Symbol VR Parameter Test Conditions Reverse Voltage IR = 0.1 mA IR(D) Dark Reverse Current VR = 10 V PK Peak Sensitivity  2 C Capacitance VR = 3 V tr Rise Time tf Fall Time 25 VR = 10 V, RL = 50  nA nm ±60 o 37 A 25 pF 50 ns 50 ns QSB34GR, QSB34ZR 730 1100 QSB34CGR, QSB34CZR 400 1100 www.onsemi.com 3 Units V 30 Reception Angle at 1/2 Power Special Sensitivity Max. 940 Ee = 1 mW / cm , VCE = 5 V 0.5 Typ. 32 Photo Current IPH Min. nm QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode Electrical / Optical Characteristics Figure 1. Relative Spectral Sensitivity vs. Wavelength Figure 2. Short Circuit Current vs. Irradiance Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Temperature Figure 5. Dark Current vs. Reverse Voltage Figure 6. Response Time vs. Load Resistance www.onsemi.com 4 QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode Typical Performance Characteristics PLCC 2L (QSB34GR / CGR) 3$&.$*( &(17(5   $12'( &+,3 &(17(5           &+,3  /$1'3$77(515(&200(1'$7,21   7239,(:     3+2726(16,7,9(685)$&( 0$;   )/$7$5($ 0,1 ƒ ƒ   0,1 6,'(9,(: )52179,(: 127(6 $12,1'8675