QSB363CGR

QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description ■ NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 (2mm) Surface Mount Package ■ Medium Wide Beam Angle, 24° ■ Clear Plastic Package ■ Matched Emitters: QEB363 or QEB373 ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend Package Dimensions EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) Schematic 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 COLLECTOR EMITTER www.fairchildsemi.com QSB363C — Subminiature Plastic Silicon Infrared Phototransistor March 2011 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. ) Symbol Parameter Rating Unit °C TOPR Operating Temperature -25 to +85 TSTG Storage Temperature -40 to +85 °C TSOL Soldering Temperature (Iron)(2,3,4) 260 °C TSOL Soldering Temperature (Flow)(2,3) 260 °C VCEO Collector Emitter Voltage 30 V VECO Emitter Collector Voltage 5 V Power Dissipation(1) 75 mW PC Notes 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100µs, T = 10ms. 5. D = 940nm, GaAs. Electrical/Optical Characteristics (TA = 25°C) Symbol Parameters λP Peak Sensitivity Wavelength Θ Reception Angle ICEO BVCEO BVECO IC(on) VCE (SAT) Test Conditions Min. Typ. Max. 940 Units nm ±12 0mW/cm2 Collector Dark Current VCE = 20V, Ee = Collector-Emitter Breakdown Voltage IC = 100µA, Ee = 0mW/cm2 30 V Emitter-Collector Breakdown Voltage 0mW/cm2 5 V On-State Collector Current IE = 100µA, Ee = VCE = 5V, Ee = 0.5mW/cm2 1mW/cm2 Collector-Emitter Saturation Voltage IC = 2mA, Ee = tr Rise Time tf Fall Time VCE = 5 V, IC = 1mA, RL = 1000Ω ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 100 1.0 1.5 nA mA 0.4 V 15 µs 15 µs www.fairchildsemi.com 2 QSB363C — Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 1.0 100 Relative Spectral Sensitivity Collector Power Dissipation Pd (mW) TA = 25˚C 80 60 40 20 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 100 75 85 100 300 500 10 VCE = 5 V Ee = 1 mW/cm2 Collector Current IC (mA) Relative Collector Current (%) 160 120 100 80 60 40 1100 1300 VCE = 5 V TA = 25˚C 1 0.1 0.01 20 0 0 20 10 40 30 50 60 0.001 0.01 70 1 0.1 10 Ambient Temperature TA (˚C) Irradiance Ee (mW/cm2) Fig. 5 Collector Dark Current vs. Ambient Temperature Fig. 6 Collector Current vs. Collector Emitter Voltage 10-6 5 14 VCE = 20 V 12 2 Collector Current IC (mA) Collector Dark Current ICEO (A) 900 Fig. 4 Collector Current vs. Irradiance Fig. 3 Relative Collector Current vs. Ambient Temperature 140 700 Wavelength λ (nm) Ambient Temperature TA (˚C) 10-7 5 2 10-8 5 2 10-9 5 10 Ee=1.50mW/cm2 8 Ee=1.25mW/cm2 6 Ee=1.0mW/cm2 4 Ee=0.75mW/cm2 2 2 10-10 Ee=0.5mW/cm2 0 0 25 50 75 100 0 2 4 3 Collector Emitter Voltage VCE (V) Ambient Temperature (°C) ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 1 www.fairchildsemi.com 3 QSB363C — Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Curves Features ■ Three lead forming options: Gull Wing, Yoke and Z-Bend ■ Compatible with automatic placement equipment ■ Supplied on tape and reel or in bulk packaging ■ Compatible with vapor phase reflow solder processes 0.006±0.002 (0.15±0.05) 0.025±0.004 (0.65±0.1) 0.043±0.008 0.055±0.008 (1.1±0.2) (1.4±0.2) R0.031±.004 (0.8±0.1) 0.012±0.004 (0.3±0.1) 0.032 +0.005 –0 +0.13 (0.83 –0 0.029±0.004 (0.75±0.1) Emitter CL 0.016±0.004 (0.4±0.1) 0.020±0.004 (0.5±0.1) 0.043±0.008 0.055±0.008 R0.031±.004 (1.1±0.2) (1.4±0.2) (0.8±0.1) 0.051±0.004 (1.3±0.1) 0.006±0.002 (0.15±0.05) 0.157±0.008 (4.0±0.2) CL 0.079±0.008 (2.0±0.2) 0.016±0.004 (0.4±0.1) 0.020±0.004 (0.5±0.1) CL Emitter 0.098±0.004 (2.5±0.1) 0.055±0.004 (1.4±0.1) 0.023 +0.005 –0 (0.6 +0.13 ) –0 ) 0.12±0.008 (3.05±0.2) 0.169±0.008 (4.3±0.2) 0.228±0.008 (5.8±0.2) 0.025±0.004 (0.65±0.1) CL ø0.075±0.008 (1.9±0.2) 0.079±0.008 (2.0±0.2) 0.098±0.004 (2.5±0.1) 0.106±0.008 (2.7±0.2) ø0.075±0.008 (ø1.9±0.2) Z-Bend Lead Configuration 0.051±0.004 (1.3±0.1) 0.106±0.008 (2.7±0.2) Gull Wing Lead Configuration 0.055±0.004 (1.4±0.1) 0.029±0.004 (0.75±0.1) Yoke Lead Configuration 0.098±0.004 (2.5±0.1) Emitter 0.006±0.002 (0.15±0.05) 0.185±0.008 (4.7±0.2) 0.291±0.008 (7.4±0.2) ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 0.029±0.004 (0.75±0.1) 0.051±0.004 (1.3±0.1) 0.106±0.008 (2.7±0.2) 0.043±0.008 0.055±0.008 (1.1±0.2) (1.4±0.2) R0.031±.004 (0.8±0.1) 0.025±0.004 (0.65±0.1) R0.016±.004 (0.4±0.1) 0.016±0.004 (0.4±0.1) 0.020±0.004 (0.5±0.1) CL CL 0.079±0.008 (2.0±0.2) ø0.075±0.008 (1.9±0.2) 0.055±0.004 (1.4±0.1) www.fairchildsemi.com 4 QSB363C — Subminiature Plastic Silicon Infrared Phototransistor Package Dimensions AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ ® FRFET SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ® PDP SPM™ * Power-SPM™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 www.fairchildsemi.com 5 QSB363C — Subminiature Plastic Silicon Infrared Phototransistor TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.