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Features
Description
■ NPN Silicon Phototransistor
The QSD123/124 is a phototransistor encapsulated in
an infrared transparent, black T-1 3/4 package.
■
■
■
■
■
■
Package Type: T-1 3/4
Matched Emitter: QED12X/QED22X/QED23X
Narrow Reception Angle: 24°C
Daylight Filter
Package Material and Color: Black Epoxy
High Sensitivity
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.040 (1.02)
NOM
0.800 (20.3)
MIN
EMITTER
COLLECTOR
Schematic
COLLECTOR
0.500 (1.25)
0.100 (2.54) NOM
0.240 (6.10)
0.215 (5.45)
EMITTER
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
QSD123/D
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
QSD123, QSD124
Plastic Silicon Infrared Phototransistor
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOPR
Operating Temperature
TSTG
Storage Temperature
TSOL-I
Rating
Unit
-40 to +100
°C
-40 to +100
°C
Soldering Temperature
(Iron)(2,3,4)
240 for 5 sec
°C
Soldering Temperature
(Flow)(2,3)
260 for 10 sec
°C
VCE
Collector-Emitter Voltage
30
V
VEC
Emitter-Collector Voltage
5
V
100
mW
TSOL-F
Power
PD
Dissipation(1)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. λ = 880nm, AlGaAs.
Electrical/Optical Characteristics (TA = 25°C)
Symbol
λPS
Θ
ICEO
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Peak Sensitivity Wavelength
880
nm
Reception Angle
±12
°
Collector-Emitter Dark Current
VCE = 10V, Ee = 0
100
nA
BVCEO
Collector-Emitter Breakdown
IC = 1mA
30
V
BVECO
Emitter-Collector Breakdown
IE = 100µA
5
V
IC(ON)
On-State Collector Current(5)
Ee = 0.5mW/cm2, VCE = 5V
4
6
QSD123
QSD124
Saturation Voltage(5)
Ee =
tr
Rise Time
VCC = 5V, RL = 100Ω, IC = 0.2mA
tf
Fall Time
VCE(SAT)
0.5mW/cm2,
www.onsemi.com
2
IC = 0.5mA
16
29
mA
0.4
V
mA
7
µs
7
µs
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Figure 1. Light Current vs. Radiant Intensity
Figure 2. Angular Response Curve
100
110
100
90
80
70
IC(ON) - Light Current (mA)
120
60
130
10
50
40
140
150
30
20
160
1
10
170
180
1.0
0.1
0.0
0.2
0.4
0.6
0.8
0.8
0.4
0.6
0.2
0.0
0.2
0.4
0.6
0.8
1.0
Ee - Radiant Intensity (mW/cm 2)
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
I L - Normalized Light Current
101
100
10-1
10-2
Ie=1mW/cm 2
Ie=0.5mW/cm 2
100
Ie=0.2mW/cm 2
Ie=0.1mW/cm 2
10-1
Normalized to:
VCE = 5V
Ie = 0.5mW/cm 2
10-2
TA = 25 oC
10-3
0
5
10
15
20
25
10-3
0.1
30
1
VCE - Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
Normalized to:
VCE = 25V
10
3
TA = 25 oC
VCE =25V
10 2
VCE =10V
10
1
10 0
10 -1
-40
1
VCE - Collector-Emitter Voltage (V)
10 4
ICEO - Normalized Dark Current
ICEO - Dark Current (nA)
101
-20
0
20
40
60
o
TA - Ambient Temperature ( C)
www.onsemi.com
3
80
100
0
0
1.0
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
Typical Performance Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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