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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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tm
QSE256, QSE257, QSE258, QSE259
Plastic Silicon OPTOLOGIC® Photosensor
Features
Description
■ Bipolar silicon IC
The QSE25x family are OPTOLOGIC® ICs which
feature a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The basic
building block of this IC consists of a photodiode, a linear
amplifier, voltage regulator, Schmitt trigger and four output options. The TTL/LSTTL compatible output can drive
up to ten TTL loads over supply currents from 4.5 to 16.0
Volts. The devices are marked with a color stripe for
easy identification.
■ Package type: Sidelooker
■ Medium wide reception angle, 50°
■ Package material and color: black epoxy
■ Daylight filter
■ High sensitivity
■ Direct TTL/LSTTL interface
Package Dimensions
2.15
2.35
ø 1.39
1.65
5° TYP ON ALL SIDES
1.14
4.35 1.40
5.85
0.67
0.77
12.7
MIN
Part Number Definitions
1.17
1.37
2.34
2.74
GND
Vcc
Vout
1.45
1.71
4.38
4.62
0.52
0.76
0.25
0.51
Note:
1. Dimensions for all drawings are in millimeters.
©2004 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
Color Code
QSE256
Totem-Pole, buffer output
QSE257
Totem-Pole, inverter output
Yellow
Red
QSE258
Open-collector, buffer output
Green
QSE259
Open-collector, inverter output
Blue
Input/Output Table
Part Number
Light
Output
QSE256
On
HIGH
Off
LOW
QSE257
On
LOW
Off
HIGH
QSE258
On
HIGH
Off
LOW
QSE259
On
LOW
Off
HIGH
www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
August 2012
VOLTAGE
REGULATOR
LA
VOLTAGE
REGULATOR
VCC
VCC
LA
VOUT
VOUT
GND
GND
QSE257
Totem-Pole Output Inverter
QSE256
Totem-Pole Output Buffer
VCC
VCC
VOLTAGE
REGULATOR
VOLTAGE
REGULATOR
VOUT
VOUT
LA
LA
GND
GND
QSE259
Open-Collector Output Inverter
QSE258
Open-Collector Output Buffer
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOPR
Operating Temperature
TSTG
Storage Temperature
Rating
Unit
-40 to +85
°C
-40 to +100
°C
TSOL-I
Soldering Temperature
(Iron)(2,3,4)
240 for 5 sec
°C
TSOL-F
Soldering Temperature (Flow)(2,3)
260 for 10 sec
°C
IO
Output Current
50
mA
VCC
Supply Voltage
4.0 to 16
V
VO
Output Voltage
35
V
PD
Power Dissipation(1)
100
mW
Notes:
1. Derate power dissipation linearly 2.50mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16" (1.6mm) minimum from housing.
©2004 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
www.fairchildsemi.com
2
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
Block Diagrams
Symbol
Ee(+)
Parameter
Positive Going Threshold
Irradiance(5)
Test Conditions
TA = 25°C
Ee(+)/Ee(-) Hysteresis Ratio
ICC
Min.
Typ.
Max.
Units
0.025
0.250
mW/cm2
1.10
2.00
Supply Current(5)
Ee = 0 or 0.3mW/cm2
5.0
mA
Peak to Peak Ripple which
will Cause False Triggering
f = DC to 50MHz
2.00
V
QSE256 (Buffer Totem Pole)
VOH
High Level Output Voltage(5)
Ee = 0.3mW/cm2, IOH = -10mA
VOL
Low Level Output Voltage
Ee = 0, IOL = 16mA
2.4
V
0.40
V
QSE257 (Inverter Totem Pole)
VOH
VOL
High Level Output Voltage
Low Level
Output Voltage(5)
Ee = 0, IOH = -10mA
Ee =
0.3mW/cm2,
2.4
V
IOL = 16mA
0.40
V
QSE258 (Buffer Open Collector)
IOH
High Level Output Current(5)
Ee = 0.3mW/cm2, VOH = 30V
100
µA
VOL
Low Level Output Voltage
Ee = 0, IOL = 16mA
0.40
V
Ee = 0, VOH = 30V
100
µA
0.40
V
70
nS
QSE259 (Inverter Open Collector)
IOH
VOL
High Level Output Current
Low Level
Output Voltage(5)
Ee =
0.3mW/cm2,
IOL = 16mA
QSE256, QSE257
tR, tF
tPHL, tPLH
Output Rise, Fall Times
Propagation Delay
Ee = 0 or 0.3mW/cm2,
f = 10kHz, DC = 50%,
RL = 360Ω(5)
6.0
µS
QSE258, QSE259
tR, tF
tPHL, tPLH
Output Rise, Fall Times
Propagation Delay
Ee = 0 or 0.3mW/cm2,
f = 10kHz, DC = 50%,
RL = 360Ω(5)
100
6.0
nS
µS
Note:
5. λ = 880nm (AlGaAs).
©2004 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
www.fairchildsemi.com
3
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
Electrical Characteristics (TA = -40°C to +85°C, VCC = 4.5V to 5.5V)
Fig. 2 Output Voltage vs. Input Current (Buffers)
Fig. 1 Output Voltage vs. Input Current (Inverters)
6
6
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
VO- Output Voltage (V)
4
3
IF (OFF)
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
5
VO- Output Voltage (V)
VOH
5
IF (ON)
2
VOH
4
3
IF (OFF)
IF (ON)
2
1
1
VOL
VOL
0
0
0
1
2
3
4
0
5
1
2
IF - Input Current (mA)
Fig. 3 Threshold Current vs. Distance
4
5
Fig. 4 Normalized Threshold Current vs. Supply Voltage
10
8
6
1.6
IF - Normalized Threshold Current
IF(ON) - Normalized Threshold Current
3
IF - Input Current (mA)
4
2
Normalized to:
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
Pulsed 100Hz
PW = 100μs
1.0
0.8
0.6
0.4
0.2
Normalized to:
Turn ON Threshold
VCC = 5 V
TA = 25°C
1.4
1.2
IF (ON)
1.0
0.8
IF (OFF)
0.6
0.4
0.2
0.1
0.0
0
2
4
6
8
10
12
14
0
d - Distance (mm)
©1.0.1 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
2
4
6
8
10
12
14
16
VCC - Supply Voltage (V)
www.fairchildsemi.com
4
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
Typical Performance Curves (Sensor Coupled to QEE113 Emitter)
Fig. 5 Normalized Threshold Current
vs. Ambient Temperature
Fig. 6 Low Output Voltage vs. Output Current
1
Normalized to:
VCC = 5 V
TA = 25°C
1.6
VCC = 5 V
TA = 25°C
IF = 10 mA
1.4
VOL- Output Voltage, Low (V)
IF - Normalized Threshold Current
1.8
IF (OFF)
1.2
IF (ON)
1.0
IF (ON)
0.8
IF (OFF)
0.6
0.4
0.1
0.2
0.01
0.0
-40
-20
0
20
40
60
80
1
100
1
0
IO - Output Current (mA)
TA - Ambient Temperature (˚C)
Fig. 7 Response Time vs. Forward Current
5
VCC = 5 V
RL = 270Ω
TA = 25°C
IF Pulsed
T = 10 ms
Duty Cycle = 50%
Response Delay Time (μs)
4
3
TPLH
2
TPHL
1
0
0
5
10
15
20
IF - Forward Current (mA)
©1.0.1 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
www.fairchildsemi.com
5
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
Typical Performance Curves (Sensor Coupled to QEE113 Emitter) (Continued)
C2
5V
R1
R2
.1 uf
bypass
Pulse
Generator
VO = 5V
f = 10 KHz
d.c. = 50%
R 1 = 360Ω
R 2 = 180Ω
C1
GND
C 1 and C2 include probe and
stray wire capacitance
C 1 = 15 pf
C 2 = 20 pf
Fig. 10 Switching Times Definition for Inverters
Fig. 9 Switching Times Definition for Buffers
50%
50%
0 mA
0 mA
t PLH
t PLH
t PHL
t PHL
VOH
VOH
Output
VO
90%
10%
10%
90%
Output
VO
50%
90%
10%
VOL
tr
©1.0.1 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
90%
10%
VOL
tf
tf
tr
www.fairchildsemi.com
6
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
Fig. 8 Switching Speed Test Circuit
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
www.fairchildsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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