RHRD660S9A-F085

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It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS www.onsemi.com 4 t ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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