RHRG5060-F085

Hyperfast Rectifier 50 A, 600 V RHRG5060-F085 Description The RHRG5060−F085 is an hyperfast diode with softrecovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. www.onsemi.com CATHODE ANODE Features • • • • • High Speed Switching ( trr = 45 ns (Typ.) @ IF = 50 A ) Low Forward Voltage( VF = 1.67 V (Typ.) @ IF = 50 A ) Avalanche Energy Rated AEC−Q101 Qualified This Device is Pb−Free TO−247−2L 340CL MARKING DIAGRAM Applications • • • • $Y&Z&3&K RHRG5060 Switching Power Supply Power Switching Circuits General Purpose Automotive and General Purpose ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current @ TC = 25 °C IF(AV) 50 A Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 150 A Avalanche Energy (1.4 A, 40 mH) EAVL 40 mJ TJ, TSTG, −55 to +175 °C DC Blocking Voltage Operating Junction and Storage Temperature 1. Cathode Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 March, 2020 − Rev. 4 $Y &Z &3 &K RHRG5060 1 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 2. Anode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: RHRG5060−F085/D RHRG5060−F085 THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol RqJC Maximum Thermal Resistance, Junction to Case RqJA Maximum Thermal Resistance, Junction to Ambient Max Units 0.42 °C/W 45 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity RHRG5060 RHRG5060−F085 TO−247 − 30 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol IR Parameter Instantaneous Reverse Current VFM (Note 1) Instantaneous Forward Voltage trr (Note 2) Reverse Recovery Time ta tb Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions VR = 600 V IF = 50 A Min. Typ. Max. Unit TC = 25°C − − 250 uA TC = 175°C − − 1.5 mA TC = 25°C − 1.67 2.1 V TC = 175°C − 1.29 1.7 V IF = 1 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 37 45 ns IF = 50 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 45 60 ns TC = 175°C − 200 − ns IF = 50 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 25 20 45 − − − ns ns nC 1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2% 2. Guaranteed by design Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 RHRG5060−F085 TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dlF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE VGE dIF Trr dt ta 0 VDD − IGBT t1 IF + tb 0.25I RM IRM t2 Figure 1. Trr Test Circuit Figure 2. Trr Waveforms and Definitions I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L VAVL R CURRENT SENSE + VDD DUT − IL IL I V Q1 VDD t0 Figure 3. Avalanche Energy Test Circuit t1 t2 t Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 3 RHRG5060−F085 IF, Forward Current (A) IR, Reverse Current (mA) TYPICAL PERFORMANCE CHARECTERISTICS VF, Forward Voltage (V) VR, Reverse Voltage (V) Figure 6. Typical Reverse Current vs. Reverse Voltage Cj, Capacitances (pF) Trr, Reverse Recovery Time (ns) Figure 5. Typical Forward Voltage Drop vs. Forward Current VR, Reverse Voltage (V) di/dt (A/ms) Figure 8. Typical Reverse Recovery Time vs. di/dt Irr, Reverse Recovery Current (A) IF(AV), Average Forward Current (A) Figure 7. Typical Junction Capacitance TC, Case Temperature (5C) di/dt (A/ms) Figure 9. Typical Reverse Recovery Current vs. di/dt Figure 10. Forward Current Derating Curve www.onsemi.com 4 RHRG5060−F085 Qrr, Reverse Recovery Charge (nC) TYPICAL PERFORMANCE CHARACTERISTICS (continued) di/dt, (A/ms) ZthJC, Thermal Response (t) Figure 11. Reverse Recovery Charge t1, Square Wave Pulse Duration (s) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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