RHRP3060

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It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Ordering Informations Part Number Package Brand RHRP3060 TO-220AC-2L RHRP3060 Pin Assignments 1. Cathode TO-220 2. Anode Absolute Maximum Ratings Symbol Parameter RHRP3060 Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 120C) 30 A IFRM Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz) 325 A PD Maximum Power Dissipation 125 W EAVL Avalanche Energy (See Figures 10 and 11) 20 mJ TJ, TSTG Operating and Storage Temperature -65 to 175 C ©2005 Fairchild Semiconductor Corporation RHRP3060 Rev. C 1 www.fairchildsemi.com RHRP3060 — Hyperfast Diode November 2013 Symbol VF IR TC = 25°C unless otherwise noted Test Conditions RHRP3060 Min. Typ. Max. Unit IF = 30 A - - 2.1 V IF = 30 A, TC = 150C - - 1.7 V VR = 400 V - - - A VR = 600 V - - 250 A VR = 400 V, TC = 150C - - - mA VR = 600 V, TC = 150C - - 1.0 mA IF = 1 A, dlF/dt = 200 A/s - - 40 ns IF = 30 A, dlF/dt = 200 A/s - - 45 ns ta IF = 30 A, dlF/dt = 200 A/s - 22 - ns tb IF = 30 A, dlF/dt = 200 A/s - 18 - ns QRR IF = 30 A, dlF/dt = 200 A/s - 100 - nC CJ VR = 600 V, IF = 0 A - 85 - pF - - 1.2 C/W trr RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%) IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = Duty cycle. ©2005 Fairchild Semiconductor Corporation RHRP3060 Rev. C 2 www.fairchildsemi.com RHRP3060 — Hyperfast Diode Electrical Characteristics Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Currnt vs Reverse Voltage 2000 IR , REVERSE CURRENT (μA) IF , FORWARD CURRENT (A) 300 100 100C 25oC 175C 10 1 0 1 2 3 175C 100 100C 10 1 0.1 25C 0.01 4 0 200 100 VF , FORWARD VOLTAGE (V) Figure 3. trr, ta and tb Curves vs Forward Current 100 40 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25C, dlF/dt = 200A/s trr 20 ta 10 tb 500 600 TC = 100C, dlF/dt = 200A/s 80 trr 60 40 ta tb 20 0 0 10 1 30 10 IF , FORWARD CURRENT (A) 1 IF , FORWARD CURRENT (A) 150 TC = 175C, dlF/dt = 200A/s 125 trr 100 75 ta 50 tb 25 0 10 1 RHRP3060 Rev. C 30 25 DC 20 SQ.WAVE 15 10 5 0 75 30 100 125 150 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) ©2005 Fairchild Semiconductor Corporation 30 Figure 6. Current Derating Curve IF(AV) , AVERAGE FORWARD CURRENT (A) Figure 5. trr, ta and tb Curves vs Forward Current t, RECOVERY TIMES (ns) 400 Figure 4. trr, ta and tb Curves vs Forward Current 50 30 300 VR , REVERSE VOLTAGE (V) 3 www.fairchildsemi.com RHRP3060 — Hyperfast Diode Typical Performance Characteristics RHRP3060 — Hyperfast Diode Typical Performance Characteristics (Continued) Figure 7. Junction Capacitance vs Reverse Voltage CJ , JUNCTION CAPACITANCE (pF) 150 125 100 75 50 25 0 0 50 150 100 200 VR , REVERSE VOLTAGE (V) Test Circuit and Waveforms Figure 8. trr Test Circuit VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE Figure 9. trr Waveforms and Definitions CURRENT SENSE - dIF trr dt ta tb 0 + IGBT t1 IF VDD 0.25 IRM IRM t2 Figure 10. Avalanche Energy Test Circuit Figure 11. Avalanche Current and Voltage Waveforms I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R IL IL + VDD I V Q1 VDD DUT ©2005 Fairchild Semiconductor Corporation RHRP3060 Rev. C t0 - 4 t1 t2 t www.fairchildsemi.com 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 8.89 6.86 1.40 0.51 7° 3° 6.86 5.84 16.51 14.22 9.40 8.38 5° 3° 1 2 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 1.65 1.25 1.91 14.73 13.60 0.61 0.33 2.54 2.92 2.03 1.02 0.38 5.08 5° 3° 0.36 M C A B 5° 3° 4.80 4.30 NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DRAWING FILE NAME: TO220A02REV5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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