RHRP8120

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RHRP8120 November 2013 Data Sheet 8 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 70 ns (@ IF= 8 A) • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) The RHRP8120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Ordering Information PART NUMBER RHRP8120 PACKAGE TO-220AC-2L Packaging BRAND JEDEC TO-220AC RHRP8120 ANODE NOTE: When ordering, use the entire part number. CATHODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP8120 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 140oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20 kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60 Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ ©2001 Fairchild Semiconductor Corporation RHR8120 Rev. C1 1 1200 1200 1200 UNIT V V V 8 A 16 A 100 A 75 20 -65 to 175 W mJ oC www.fairchildsemi.com RHRP8120 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX IF = 8 A TEST CONDITION - - 3.2 V IF = 8 A, TC = 150oC - - 2.6 V VR = 1200 V - - 100 µA VR = 1200 V, TC = 150oC - - 500 µA IF = 1 A, dIF/dt = 200 A/µs - - 55 ns IF = 8 A, dIF/dt = 200 A/µs - - 70 ns ta IF = 8 A, dIF/dt = 200 A/µs - 30 - ns tb IF = 8 A, dIF/dt = 200 A/µs - 20 - ns Qrr IF = 8 A, dIF/dt = 200 A/µs - 165 - nC VR = 10 V, IF = 0 A - 25 - pF 2 oC/W VF IR trr CJ RθJC - - UNIT DEFINITIONS VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). IR = Instantaneous reverse current. Trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). Qrr = Reverse Recovery Charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse Width. D = Duty Cycle. Typical Performance Curves 500 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 40 10 100oC 175oC 25oC 1 175oC 100 10 100oC 1 25oC 0.1 0.01 0.001 0.5 0 1 2 3 VF , FORWARD VOLTAGE (V) 4 0 5 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2001 Fairchild Semiconductor Corporation RHRP8120 Rev. C1 200 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 www.fairchildsemi.com RHRP8120 Typical Performance Curves (Continued) 100 60 TC = 100oC, dIF/dt = 200A/µs TC = 25oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 40 trr 30 ta 20 tb 10 0 0.5 4 1 80 60 trr 40 ta 20 tb 0 0.5 8 1 IF , FORWARD CURRENT (A) FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) TC = 175oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 100 80 trr 60 40 ta 20 tb 0 0.5 1 8 IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT 120 4 4 8 10 8 DC 6 SQ. WAVE 4 2 0 100 115 IF , FORWARD CURRENT (A) 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2001 Fairchild Semiconductor Corporation RHRP8120 Rev. C1 3 www.fairchildsemi.com RHRP8120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 dIF trr dt ta tb 0 VDD 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation RHRP8120 Rev. C1 t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 www.fairchildsemi.com 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 8.89 6.86 1.40 0.51 7° 3° 6.86 5.84 16.51 14.22 9.40 8.38 5° 3° 1 2 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 1.65 1.25 1.91 14.73 13.60 0.61 0.33 2.54 2.92 2.03 1.02 0.38 5.08 5° 3° 0.36 M C A B 5° 3° 4.80 4.30 NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DRAWING FILE NAME: TO220A02REV5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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