RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
• 2.5% EVM at 18.0dBm modulated power out
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50Ω minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
• Internally matched to 50Ω
Device
• Minimal external components
Features
• Optimized for use in IEEE 802.11a
WLAN applications
• 4.9 to 5.85 GHz Operation
• 27dB small signal gain
• 26dBm output power @ 1dB compression
Electrical Characteristics1,3 802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency10
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5, 6
Minimum
4.90
3.0
Typical
3.3
27
250
260
2.5
3.5
450
5.0
21.0
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
28
240
250
2.5
3.5
500
5.0
20.0
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Electrical Characteristics1 Single Tone
Parameter
Frequency10
Supply Voltage
Gain7
Total Quiescent Current7, 11
Minimum
4.90
3.0
Typical
3.3
27
140–220
3.3
27.5
140–220
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. POUT measured at PIN corresponding to power detection threshold.
5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. PIN is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
October 2004
Parameter
Bias Current at pin VM8
P1dB Compression7
Current @ P1dB Comp7
Standby Current9
Shutdown Current (VM=0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector POUT Threshold3, 4
Minimum
Frequency
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic Shutdown Control Pin (VL):
Device Off
Device On
Logic Current
Turn-on Time13
Turn-off Time
Spurious (Stability)14
Typical
16
26
425
1.9
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