RS1AFA

DATA SHEET www.onsemi.com Surface Mount Fast Recovery Rectifiers 1 Cathode 0.8 A, 50 V - 1000 V 2 Anode RS1AFA, NRVHPRS1AFA Series 2 1 Features • • • • • • • • • Glass Passivated Chip Junction Fast Switching for High Efficiency High Surge Capacity Low Forward Voltage: 1.3 V Maximum UL Flammability 94V−0 Classification MSL 1 per J−STD−020 RoHS Compliant / Green Molding Compound Industrial Device Qualified per AEC−Q101 Standards NRVHP Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable SOD−123FA CASE 425AB (Color Band Denotes Cathode) *See authorized use policy ORDERING INFORMATION Part Number Top Mark Package Packing Method† RS1AFA RAL SOD−123FA Tape and Reel RS1BFA RBL SOD−123FA Tape and Reel RS1DFA RDL SOD−123FA Tape and Reel RS1GFA RGL SOD−123FA Tape and Reel RS1JFA RJL SOD−123FA Tape and Reel RS1KFA RKL SOD−123FA Tape and Reel RS1MFA RML SOD−123FA Tape and Reel NRVHPRS1AFA RAL SOD−123FA Tape and Reel NRVHPRS1BFA RBL SOD−123FA Tape and Reel NRVHPRS1DFA RDL SOD−123FA Tape and Reel NRVHPRS1GFA RGL SOD−123FA Tape and Reel NRVHPRS1JFA RJL SOD−123FA Tape and Reel NRVHPRS1KFA RKL SOD−123FA Tape and Reel NRVHPRS1MFA RML SOD−123FA Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2022 − Rev. 3 1 Publication Order Number: RS1AFA/D RS1AFA, NRVHPRS1AFA Series Table 1. ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Value Symbol Parameter RS1 AFA RS1 BFA RS1 DFA RS1 GFA RS1 JFA RS1 KFA RS1 MFA Unit VRRM Repetitive Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS RMS Reverse Voltage 35 70 140 280 420 560 700 V DC Blocking Voltage 50 100 200 400 600 800 1000 V VR IF(AV) Average Forward Rectified Current 0.8 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load 30 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. THERMAL CHARACTERISTICS (Note 1) Symbol Parameter Value Unit YJL Typical Thermal Characteristics, Junction−to−Lead 32 °C/W RqJA Typical Thermal Resistance, Junction−to−Ambient 105 °C/W 1. Device mounted on 5 mm x 5 mm Cu pad PCB. Table 3. ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min Typ Max Unit VF Instantaneous Forward Voltage (Note 2) IF = 0.8 A 1.3 V IR Reverse Current at Rated VR TJ = 25°C 5 mA TJ = 125°C 50 CJ Junction Capacitance Trr Reverse Recovery Time VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, Irr = 0.25 A 10 pF RS1AFA, RS1BFA, RS1DFA 150 RS1GFA, RS1JFA 250 RS1KFA, RS1MFA 500 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle www.onsemi.com 2 RS1AFA, NRVHPRS1AFA Series INSTANTANEOUS REVERSE CURRENT (mA) TYPICAL PERFORMANCE CHARACTERISTICS 1.0 AVERAGE FORWARD A CURRENT (A) 0.9 RESISTIVE OR INDUCTIVE LOAD 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 175 100 TJ =125oC 10 1 TJ =100oC 0.1 0.01 0.001 TJ =25oC 0 LEAD TEMPERATURE (oC) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Figure 1. Forward Current Derating Curve Figure 2. Typical Reverse Characteristics INSTANTANEOUS FORWARDCURRENT (A) PEAK FORWARD SURGE CURRENT (A) 10 50 8.3ms Single Half Sine Wave 40 30 20 10 0 1 10 100 Pulse Width=300ms 1% Duty Cycle TJ =125oC 1 TJ =25oC 0.1 0.4 NUMBER OF CYCLES AT 60 Hz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Figure 3. Maximum Non−Repetitive Forward Surge Current Figure 4. Typical Instantaneous Forward Characteristics 100 CAPACITANCE (pF) f=1.0MHz Vsig=50mVp−p 10 1 1 10 100 REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FA CASE 425AB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13722G SOD−123FA DATE 11 AUG 2022 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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