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RURD4120S9A_F085
Data Sheet
2018
October
2018
4A, 1200V Ultrafast Diodes
Features
The RURD4120S9A_F085 are ultrafast diodes with
soft recovery characteristics (trr < 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2009 Fairchild Semiconductor Corporation
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
4
RURD4120S9A_F085 Rev. 1
RURD4120S9A_F085
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Obsolete
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Semiconductor. The datasheet is for reference information only.
Rev. I39
©2009 Fairchild Semiconductor Corporation
5
RURD4120S9A_F085 Rev. 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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