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RURG3060CC-F085

RURG3060CC-F085

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO247

  • 描述:

    DIODE ARRAY GP 600V 30A TO247

  • 数据手册
  • 价格&库存
RURG3060CC-F085 数据手册
Ultrafast Rectifier 30 A, 600 V RURG3060CC-F085 Description The RURG3060−F085 is an dual ultrafast diode with soft recovery characteristics (trr < 80 ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. www.onsemi.com CATHODE (BOTTOM SIDE METAL) ANODE 1 CATHODE ANODE 2 Features • • • • • High Speed Switching (trr = 60 ns (Typ.) @ IF = 30 A) Low Forward Voltage (VF = 1.5 V (Max) @ IF = 30 A) Avalanche Energy Rated AEC−Q101Qualified and PPAP Capable This is a Pb−Free Device TO−247−3LD CASE 340CK K Applications • • • • Automotive DC/DC Converter Automotive On Board Charger Switching Power Supply Power Switching Circuits A1 A2 MARKING DIAGRAM $Y&Z&3&K RURG3060C $Y &Z &3 &K RURG3060C = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 February, 2020 − Rev. 4 1 Publication Order Number: RURG3060CC−F085/D RURG3060CC−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25°C) IF(AV) 30 A Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 90 A Avalanche Energy (1 A, 40 mH) EAVL 20 mJ TJ, TSTG −55 to +175 °C Parameter DC Blocking Voltage Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity RURG3060CC−F085 RURG3060C TO−247 − 30 THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Max Unit Maximum Thermal Resistance, Junction to Case (Single Anode) RqJC 1 °C/W Maximum Thermal Resistance, Junction to Ambient RqJA 45 °C/W Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Instantaneous Reverse Current IR Instantaneous Forward Voltage Reverse Recovery Time Reverse Recovery Time Avalanche Energy VR = 600 V Min Typ Max TC = 25°C − − 250 mA TC = 175°C − − 1.0 mA TC = 25°C − 1.26 1.5 V TC = 175°C − 1.06 1.3 V VFM (Note 1) IF = 30 A trr (Note 2) IF = 1 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 35 55 ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 60 80 ns TC = 175°C − 231 − ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 31 − ns − 29 − ns − 92 − nC 20 − − mJ ta tb Reverse Recovery Charge Conditions Qrr EAVL IAV = 1.0 A, L = 40 mH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test Pulse Width = 300 ms, Duty Cycle = 3% 2. Guaranteed by design. www.onsemi.com 2 RURG3060CC−F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT RG VGE CURRENT SENSE + − IGBT t1 IF VDD dIF dt trr ta 0 tb 0.25 IRM IRM t2 Figure 2. trr Waveforms and Definitions Figure 1. trr Test Circuit IMAX = 1 A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L R CURRENT SENSE + VDD DUT VDD − IL IL I V Q1 t0 t1 t2 Figure 4. Avalanche Current and Voltage Waveforms Figure 3. Avalanche Energy Test Circuit www.onsemi.com 3 t RURG3060CC−F085 400 1000 100 100 Reverse Current, IR [mA] Forward Current, IF [A] TYPICAL PERFORMANCE CHARACTERISTICS (Single Anode) TC = 175°C 10 TC = 125°C 1 TC = 25°C 0.1 0.1 0.5 1.0 TC = 125°C 10 1 0.1 0.01 TC = 25°C 1E−3 1E−4 2.0 1.5 TC = 175°C 0 100 200 Forward Voltage, VF [V] Reverse Recovery Time trr [ns] Capacitance, Cj [pF] 250 Typical Capacitance at 10 V = 103 pF 300 200 100 0.1 1 10 Reverse Voltage, VR [V] Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 20 15 0 100 TC = 125°C 200 300 di/dt [A/ms] IF = 30 A 400 TC = 125°C 100 50 TC = 25°C 200 300 400 500 Figure 8. Typical Reverse Recovery Time vs. di/dt TC = 175°C TC = 25°C 150 di/dt [A/ms] 30 5 600 TC = 175°C 0 100 35 10 500 IF = 30 A 200 100 Figure 7. Typical Junction Capacitance 25 400 Figure 6. Typical Reverse Current vs. Reverse Voltage Figure 5. Typical Forward Voltage Drop vs. Forward Current 400 300 Reverse Voltage, VR [V] 500 40 30 20 10 0 25 50 75 100 125 150 175 Case Temperature, TC [°C] Figure 10. Forward Current Derating Curve Figure 9. Typical Reverse Recovery Current vs. di/dt www.onsemi.com 4 RURG3060CC−F085 Reverse Recovery Charge, Qrr [nC] TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2500 IF = 30 A TC = 175°C 2000 1500 TC = 125°C 1000 TC = 25°C 500 0 100 200 300 di/dt [A/ms] 400 500 Figure 11. Reverse Recovery Charge 2 ZqJC(t), Thermal Response 1 D = 0.5 PDM t1 0.2 0.1 0.1 0.05 *Notes: 1. ZqJC(t) = 1.0°C/W Typ. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 0.02 0.01 Single Pulse 0.001 10−5 t2 10−4 10−3 10−2 10−1 100 t1, Square Wave Pulse Duration [sec] Figure 12. Transient Thermal Response Curve www.onsemi.com 5 101 102 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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