RURP15100_F085

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Features 15A, 1000V Ultrafast Rectifier • High Speed Switching ( trr=200ns(Typ.) @ IF=15A ) The RURP15100-F085 is an ultrafast diode with soft recovery characteristics (trr< 200ns). It has a low forward voltage drop and is of silicon nitride passivated, ionimplanted, epitaxial construction. This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of automotive power supplies and other power switching automotive applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. • Low Forward Voltage( VF=1.8V(Max.) @ IF=15A ) • Avalanche Energy Rated • AEC-Q101 Compliant Applications • Automotive DCDC converter • Automotive On Board Charger • Switching Power Supply • Power Switching Circuits Pin Assignments 1 1. Cathode Absolute Maximum Ratings 2 2. Anode TC = 25°C unless otherwise noted Ratings Units VRRM Symbol Peak Repetitive Reverse Voltage Parameter 1000 V VRWM Working Peak Reverse Voltage 1000 V VR DC Blocking Voltage 1000 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current EAVL Avalanche Energy(1A,40mH) TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C @ TC = 25°C 15 A 45 A 20 mJ - 55 ~175 °C Max Units = 25°C unless otherwise noted Symbol Parameter RθJC Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient 0.94 °C/W 85 °C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity RURP15100 RURP15100-F085 TO-220AC - 50 © 2014 Semiconductor Components Industries, LLC August-2017, Rev. 3 1 Publication Order Number: RURP15100-F085/D RURP15100-F085 15A 1000V Ultrafast Rectifier RURP15100-F085 15A 1000V Ultrafast Rectifier C Symbol IR VF = 25°C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 1000V 1 trr2 Min. Typ. Max Units TC = 25 °C - - 100 uA TC = 175 °C - - 1000 uA Instantaneous Forward Voltage IF = 15A TC = 25 °C TC = 175 °C - 1.35 1.14 1.8 1.6 V V Reverse Recovery Time IF =1A, di/dt = 100A/μs, VR=650V TC = 25 °C - 126 260 ns IF =15A, di/dt = 100A/μs, VR=650V TC = 25 °C TC = 175 °C - 200 720 450 - ns ns IF =15A, di/dt = 100A/μs, VR=650V TC = 25 °C - 63 137 683 - ns ns nC 20 - - mJ ta tb Qrr Reverse Recovery Time WAVL Avalanche Energy Reverse Recovery Charge IAV=1.0A, L=40mH Notes: 1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2% 2.Guaranteed by design. Test Circuit and Waveforms www.onsemi.com 2 RURP15100-F085 15A 1000V Ultrafast Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 1000 100 o T C = 175 C Reverse Current , IR [μA] Forward Current, IF [A] 100 o TC = 175 C 10 T C = 125oC 1 TC = 25oC 0.1 0.1 0.5 1.0 1.5 2.0 Forward Voltage, V F [V] 0.1 o TC = 25 C 0.01 1E-4 2.5 0 200 400 600 800 Reverse Voltage, VR [V] 1000 Figure 4. Typical Reverse Recovery Time vs. di/dt 250 800 IF = 15A Reverse Recovery Time, trr [ns] Typical Capacitance at 10V = 60pF Capacitances , Cj [pF] 1 1E-3 Figure 3.Typical Junction Capacitance 200 150 100 50 0 0.1 1 10 Reverse Voltage, V R [V] 600 o TC = 175 C 400 TC = 125oC 200 o TC = 25 C 0 100 100 200 300 di/dt [A/μs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 30 90 IF = 15A 25 T C = 175oC Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] o T C = 125 C 10 TC = 125oC 20 15 o TC = 25 C 10 5 100 200 300 di/dt [A/μs] 400 500 60 30 0 25 www.onsemi.com 3 50 75 100 125 150 o Case temperature, TC [ C] 175 RURP15100-F085 15A 1000V Ultrafast Rectifier Typical Performance Characteristics RURP15100-F085 15A 1000V Ultrafast Rectifier Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Q rr [nC] 6000 I F = 15A o T C = 175 C 4500 TC = 125o C 3000 1500 o T C = 25 C 0 100 200 300 di/dt [A/μs] 400 500 Figure 8. Transient Thermal Response Curve Z (t), Thermal Response thJC 1 D=0.5 PDM 0.2 t1 0.1 0.1 t2 0.05 0.02 * Notes : 0.01 o 1. Z (t) = 0.94 C/W Typ. thJC single pulse 2. Duty Factor, D=t /t 1 2 3. T -T =P *Z (t) JM C DM thJC 0.01 -5 10 10 -4 -3 10 -2 10 -1 10 t , Square Wave Pulse Duration [sec] 1 www.onsemi.com 4 0 10 10 1 2 10 TO-220-2L 3.636 0.36 M 10.360 10.109 A B B A 2.860 2.660 8.787 8.587 1 13.894 12.941 8.89 6.86 2 12.878 12.190 5° 3° 5° 3° 0.60 MAX 2.755 2.555 1.65 1.25 1.91 6.477 6.121 1.400 1.146 7° 3° 3 15.215 14.757 C 3.962 3.720 0.889 0.787 0.36 M C A B 0.457 0.357 2.640 2.440 5.180 4.980 5° 3° 5° 3° 4.672 4.472 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AC. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DRAWING FILE NAME: TO220B02REV5 Dimensions in Millimeters www.onsemi.com 5 RURP15100-F085 15A 1000V Ultrafast Power Rectifier Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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