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RURP1560-F085

RURP1560-F085

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO220-2

  • 描述:

    RURP1560-F085

  • 数据手册
  • 价格&库存
RURP1560-F085 数据手册
Features 15A, 600V Ultrafast Rectifier • High Speed Switching ( trr=52ns(Typ.) @ IF=15A ) The RURP1560-F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated, ion-implanted, epitaxial construction. This device is intended for use as an energy steering / clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. • Low Forward Voltage( VF=1.5V(Max.) @ IF=15A ) • Avalanche Energy Rated • AEC-Q101 Qualified Applications • Automotive DCDC converter • Automotive On Board Charger • Switching Power Supply • Power Switching Circuits Pin Assignments TO-220-2L 2 2. Anode 1 1. Cathode Cathode Anode Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 15 A @ TC = 25°C IFSM Non-repetitive Peak Surge Current 200 A EAVL Avalanche Energy (1A, 40mH) 20 mJ TJ, TSTG Operating Junction and Storage Temperature - 55 to +175 °C Thermal Characteristics T C = 25°C unless otherwise noted Max Units RθJC Symbol Maximum Thermal Resistance, Junction to Case Parameter 1 °C/W RθJA Maximum Thermal Resistance, Junction to Ambient 85 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity RURP1560 RURP1560-F085 TO-220-2L - - 50 ©2013 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: RURP1560-F085/D RURP1560-F085 15A, 600V Ultrafast Rectifier RURP1560-F085 15A, 600V Ultrafast Rectifier C Symbol IR = 25°C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 600V Min. Typ. Max Units TC = 25 °C - - 100 uA TC = 175 °C - - 1 mA VFM1 Instantaneous Forward Voltage IF = 15A TC = 25 °C TC = 175 °C - 1.24 1.0 1.5 1.2 V V trr2 Reverse Recovery Time IF =1A, di/dt = 100A/μs, VCC= 390V TC = 25 °C - 32 55 ns IF =15A, di/dt = 100A/μs, VCC= 390V TC = 25 °C TC = 175 °C - 52 220 70 - ns ns IF =15A, di/dt = 100A/μs, VCC= 390V TC = 25 °C - 28 24 73 - ns ns nC 20 - - mJ ta tb Qrr Reverse Recovery Time EAVL Avalanche Energy Reverse Recovery Charge IAV=1.0A,L = 40mH Notes: 1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms www.onsemi.com 2 RURP1560-F085 15A, 600V Ultrafast Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 1000 400 o TC = 175 C 100 Reverse Current , IR [μA] Forward Current, IF [A] 100 o TC = 175 C o TC = 125 C 10 o 1 TC = 25 C 10 o TC = 125 C 1 0.1 0.01 o TC = 25 C 1E-3 0.1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 1E-4 2.5 Figure 3.Typical Junction Capacitance Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] 500 600 IF = 15A 200 150 100 50 240 o 180 120 TC = 175 C o TC = 125 C 60 o TC = 25 C 1 10 Reverse Voltage, VR [V] 0 100 100 200 300 di/dt [A/μs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 25 80 IF = 15A Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 200 300 400 Reverse Voltage, VR [V] 300 Typical Capacitance at 10V = 63pF o TC = 175 C 20 o 15 TC = 125 C 10 o TC = 25 C 5 0 100 100 Figure 4. Typical Reverse Recovery Time vs. di/dt 250 0 0.1 0 200 300 di/dt [A/μs] 400 70 60 50 40 30 20 10 0 25 500 www.onsemi.com 3 50 75 100 125 o 150 Case temperature, TC [ C] 175 RURP1560-F085 15A, 600V Ultrafast Rectifier Typical Performance Characteristics RURP1560-F085 15A, 600V Ultrafast Rectifier Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Qrr [nC] 1600 IF = 15A 1400 o TC = 175 C 1200 1000 800 o TC = 125 C 600 400 o TC = 25 C 200 0 100 200 300 di/dt [A/μs] 400 500 Figure 8. Transient Thermal Response Curve 2 Z (t), Thermal Response thJC 1 D=0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 0.01 0.01 t2 * Notes : o 1. Z (t) = 1 C/W Typ. thJC single pulse 2. Duty Factor, D=t /t 1 2 3. T -T =P *Z (t) JM C DM thJC 0.001 -5 10 10 -4 -3 10 -2 10 -1 10 t , Square Wave Pulse Duration [sec] 1 www.onsemi.com 4 0 10 10 1 2 10 4.036 3.636 0.36 M 10.360 10.109 A B B A 2.860 2.660 8.787 8.587 1 13.894 12.941 8.89 6.86 2 12.878 12.190 5° 3° 5° 3° 0.60 MAX 2.755 2.555 1.65 1.25 1.91 6.477 6.121 1.400 1.146 7° 3° 3 15.215 14.757 C 3.962 3.720 0.889 0.787 0.36 M C A B 0.457 0.357 2.640 2.440 5.180 4.980 5° 3° 5° 3° 4.672 4.472 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AC. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DRAWING FILE NAME: TO220B02REV5FAIRCHILD Dimensions in Millimeters www.onsemi.com 5 RURP1560-F085 15A, 600V Ultrafast Rectifier Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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