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MUR8100E, RURP8100
November 2013
Data Sheet
Features
8 A, 1000 V Ultrafast Diodes
• Ultrafast Recovery trr = 100 ns (@ IF = 8 A)
The MUR8100E, RUR8100 is an ultrafast diode with low
forward voltage drop. This device is intended for use as
freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It
is specially suited for use in switching power supplies and
industrial application.
• Max Forward Voltage, VF = 1.8 V (@ TC = 25°C)
• 1000 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
Packaging
PACKAGE
JEDEC TO-220AC
BRAND
MUR8100E
TO-220AC
MU8100
RURP8100
TO-220AC
RURP8100
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
MUR8100E
RURP8100
UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
1000
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC)
8
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave 20kHz)
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave 1 Phase 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
75
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
-55 to 175
oC
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
1
www.fairchildsemi.com
MUR8100E, RURP8100
Electrical Specifications
TC = 25oC, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
IF = 8 A
-
-
1.8
V
IF = 8 A, TC = 150oC
-
-
1.5
V
VR = 1000 V
-
-
100
µA
VR = 1000 V, TC = 150oC
-
-
500
µA
IF = 1 A
-
-
85
ns
IF = 8 A, dIF/dt = 200 A/µs
-
-
100
ns
ta
IF = 8 A, dIF/dt = 200 A/µs
-
50
-
ns
tb
IF = 8 A, dIF/dt = 200 A/µs
-
30
-
ns
QRR
IF = 8 A, dIF/dt = 200 A/µs
-
500
-
nC
VR = 10 V, IF = 0 A
-
30
-
pF
-
-
2.0
oC/W
VF
IR
trr
CJ
RθJC
UNIT
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300 µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
200
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
40
175oC
10
100oC
25oC
1
175oC
10
100oC
1
0.1
25oC
0.01
0.001
0.5
0
0.5
1
1.5
2
2.5
0
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
200
400
600
800
1000
VR , REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
www.fairchildsemi.com
MUR8100E, RURP8100
Typical Performance Curves
(Continued)
125
100
TC = 100oC, dIF/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
TC = 25oC, dIF/dt = 200A/µs
80
60
trr
40
ta
20
100
75
trr
50
ta
25
tb
tb
0
0.5
4
1
0
0.5
8
IF(AV) , AVERAGE FORWARD CURRENT (A)
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
150
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
125
trr
75
ta
50
tb
25
0
0.5
1
8
IF, FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
100
4
1
IF, FORWARD CURRENT (A)
4
8
8
DC
6
SQ. WAVE
4
2
0
140
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
IF, FORWARD CURRENT (A)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
CJ , JUNCTION CAPACITANCE (pF)
100
80
60
40
20
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
3
www.fairchildsemi.com
MUR8100E, RURP8100
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
CURRENT
SENSE
RG
IF
+
VGE
-
IGBT
t1
dIF
trr
dt
ta
tb
0
VDD
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
4
www.fairchildsemi.com
MUR8100E, RURP8100 — Ultrafast Diode
Mechanical Dimensions
Figure 12. TO-220 2L - TO-220, MOLDED, 2LD
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
5
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
6
www.fairchildsemi.com
MUR8100E, RURP8100 — Ultrafast Diode
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