S115FP

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This literature is subject to all applicable copyright laws and is not for resale in any manner. SS12FP - S115FP 1 A, 20 V - 150 V Surface Mount Schottky Barrier Rectifiers SOD-123HE Features • • • • • • • • 2 Larger Cathode Pad for Improved Power Dissipation Ultra Thin Profile - Package Height < 1.0 mm High Surge Current Capability Low Power Loss, High Efficiency UL Flammability 94V-0 Classification MSL 1 per J-STD-020 RoHS Compliant / Green Molding Compound Industrial Device Qualified per AEC-Q101 Standards * See authorized use policy 2 1 1 Band Indicates Cathode 1 Cathode 2 Anode Ordering Information Part Number Top Mark Package Packing Method SS12FP 2FP SOD-123HE Tape and Reel SS13FP 3FP SOD-123HE Tape and Reel SS14FP 4FP SOD-123HE Tape and Reel SS16FP 6FP SOD-123HE Tape and Reel S110FP 0FP SOD-123HE Tape and Reel S115FP AFP SOD-123HE Tape and Reel © 2016 Fairchild Semiconductor Corporation SS12FP - S115FP Rev. 1.2 www.fairchildsemi.com SS12FP - S115FP — 1 A, 20 V - 150 V Surface Mount Schottky Barrier Rectifiers February 2017 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Value Symbol Parameter SS12 FP SS13 FP SS14 FP SS16 FP S110 FP S115 FP Unit 20 30 40 60 100 150 V VRRM Repetitive Peak Reverse Voltage VRMS RMS Reverse Voltage 14 21 28 42 70 105 V DC Blocking Voltage 20 30 40 60 100 150 V VR IF(AV) IFSM TJ TSTG Average Forward Rectified Current 1 A Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave Superimposed on Rated Load 30 A Operating Junction Temperature Range -55 to +125 C -55 to +150 Storage Temperature Range C -55 to +150 Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter JL Thermal Characteristics, Junction-to-Lead RJA Thermal Resistance, Junction-to-Ambient Value (2) Unit 10 C/W 140 C/W Notes: 1. Per JESD51-3 recommended thermal test board. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm. 2. Thermocouple soldered at cathode lead. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Value Conditions Parameter SS12 FP SS13 FP IF = 0.5 A SS14 FP SS16 FP S110 FP S115 FP 0.51 0.58 0.70 0.75 0.55 0.70 0.80 0.90 Unit VF Maximum Instantaneous Forward Voltage(3) IR Maximum Reverse Current at Rated VR CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 54 28 pF Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 6 14 ns IF = 1.0 A 0.45 TJ = 25°C 0.50 0.40 TJ = 125°C 0.05 0.50 V mA Note: 3. Pulse test with PW = 300 μs, 1% duty cycle © 2016 Fairchild Semiconductor Corporation SS12FP - S115FP Rev. 1.2 www.fairchildsemi.com 2 SS12FP - S115FP — 1 A, 20 V - 150 V Surface Mount Schottky Barrier Rectifiers Absolute Maximum Ratings PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A)       RESISTIVE OR INDUVTIVE LOAD           8.3ms Single Half Sine Wave.     CASE TEMPERATURE (°C) Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Forward Surge Curren 1 1 S110FP SS16FP Forward Current, IF [A]  NUMBER OF CYCLES AT 60 Hz Forward Current, IF [A] o TA= 150 C o TA= 125 C o TA= -55 C 0.1 o TA= 25 C o TA= -40 C o TA= 150 C o TA= 125 C o 0.1 TA= -55 C o TA= -40 C o TA= 25 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.01 0.0 0.8 0.1 0.2 Forward Voltage, VF [V] Figure 3. Typical Forward Characteristics 0.6 0.7 0.8 SS12FP-SS16FP 1000 o Reverse Current, IR [μA] Forward Current, IF [A] 0.5 10000 S115FP TA= 150 C o TA= -55 C 0.1 o TA= 125 C o o TA= 25 C 0.1 0.4 Figure 4. Typical Forward Characteristics 1 0.01 0.0 0.3 Forward Voltage, VF [V] 0.2 TA= -40 C 0.3 0.4 0.5 0.6 0.7 0.8 o 0.9 TA= 125 C o TA= 75 C 1 o 0.1 TA= 25 C 0.01 o 0.001 1E-5 10 1.0 TA=150 C o 10 TA= -55 C o TA= -40 C 1E-4 Forward Voltage, VF [V] 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage [%] Figure 5. Typical Forward Characteristics © 2016 Fairchild Semiconductor Corporation SS12FP - S115FP Rev. 1.2 100 Figure 6. Typical Reverse Characteristics www.fairchildsemi.com 3 SS12FP - S115FP — 1 A, 20 V - 150 V Surface Mount Schottky Barrier Rectifiers Typical Performance Characteristics 10000 TA=150 C Junction Capacitance, CJ [pF] Reverse Current, IR [μA] 1000 o S110FP-S115FP 1000 100 10 o TA= 125 C o TA= 75 C 1 o TA= -55 C 0.1 o TA= 25 C 0.01 o TA= -40 C 0.001 1E-4 1E-5 10 20 30 40 50 60 70 80 90 10 1 0.1 100 Percent of Rated Peak Reverse Voltage [%] Figure 7. Typical Reverse Characteristics © 2016 Fairchild Semiconductor Corporation SS12FP - S115FP Rev. 1.2 100 SS12FP-SS16FP S110FP-S115FP 1 10 Reverse Voltage, VR [V] 100 Figure 8. Typical Junction Capacitance www.fairchildsemi.com 4 SS12FP - S115FP — 1 A, 20 V - 150 V Surface Mount Schottky Barrier Rectifiers Typical Performance Characteristics (Continued) 3.00 2.60 0.55 1.15 0.85 1.95 1.65 1.40 2.30 0.30 0.10 1.00 0.75 1.25 LAND PATTERN RECOMMENDATION 3.90 3.50 2.05 1.65 2.05 1.65 NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. DRAWING FILE NAME: MKT-MA02Crev2 0.40 2.30 1.90 1.25 0.85 0.25 1.20 0.55 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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