S3J

S3A-S3N General-Purpose Rectifiers Features • • • • • Low−Profile Package Glass−Passivated Junction UL Flammability Classification: 94V−0 UL Certified, UL #E258596 These are Pb−Free Devices www.onsemi.com Cathode (2) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Symbol Parameter S3A S3B S3D S3G S3J S3K S3M S3N 50 100 200 400 600 800 1000 1200 Anode (1) Unit VRRM Maximum Repetitive Reverse Voltage V IF(AV) Average Rectified Forward Current TL = 105°C 3.0 A IFSM Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 100 A Anode (1) Cathode (2) MARKING DIAGRAM TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature Range −55 to +150 °C $Y&Z&3 S3X Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. $Y &Z &3 S3X THERMAL CHARACTERISTICS (Note 1) Symbol Value Unit Power Dissipation 2.6 W RqJA Thermal Resistance, Junction-to-Ambient 100 °C/W RqJL Thermal Resistance, Junction-to-Lead 13 °C/W PD SMC CASE 403AG Parameter = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Specific Device Code X = A−N ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. 1. Device is mounted on FR−4 PCB 0.013 mm. Land pattern size: refer to the package drawing. Trace size: force line = 50 mil & sense line = 4 mil. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted (per leg)) Value Symbol Parameter S3A Conditions VF Maximum Forward Voltage trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IR Maximum Reverse Current at Rated VR Typical Total Capacitance CT IF = 3.0 A S3B S3D S3G S3J S3K S3M S3N Unit 1.2 V 2.5 ms TA = 25_C 5 mA TA = 125_C 250 VR = 4.0 V, f = 1.0 MHz 60 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. © Semiconductor Components Industries, LLC, 2001 January, 2019 − Rev. 5 1 Publication Order Number: S3N/D S3A−S3N 4.0 100 3.5 Forward Current, IF [A] Average Rectified Forward Current, IF [A] TYPICAL PERFORMANCE CHARACTERISTICS 3.0 2.5 2.0 1.5 1.0 0.5 0.0 50 60 70 80 90 10 1 0.1 0.01 100 110 120 130 140 150 TJ = 25°C Pulse Width = 300 ms 2% Duty Cycle 0.6 0.7 Lead Temperature [5C] Figure 1. Forward Current Derating Curve 100 Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] 1.0 1.1 1.2 1.3 100 8.3 ms Single Half Sine-Wave JEDEC Method 80 60 40 20 0 1 2 5 10 20 50 TA = 125°C 10 1 TA = 25°C 0.1 100 Number of Cycles at 60 Hz 50 10 5 10 20 40 60 80 100 120 140 Figure 4. Reverse Current vs. Reverse Voltage 100 1 0 % of Reverse Voltage, VR [V] Figure 3. Non-Repetitive Surge Current Total Capacitance, CT [pF] 0.9 Figure 2. Forward Voltage Characteristics 120 5 0.8 Forward Voltage, VF [V] 50 100 Reverse Voltage, VR [V] Figure 5. Total Capacitance www.onsemi.com 2 S3A−S3N ORDERING INFORMATION Part Number Top Marking Package Shipping† S3A S3A 3000 / Tape & Reel S3B S3B DO−214AB (SMC) (Pb−Free) S3D S3D S3G S3G S3J S3J S3K S3K S3M S3M S3N S3N †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403AG ISSUE O DATE 31 AUG 2016 8.15 7.75 B 1.96 6.25 5.55 3.27 2.75 3.39 B 6.81 0.13 M 7.15 6.60 A C B A LAND PATTERN RECOMMENDATION TOP VIEW 2.45 1.90 A 8° 0° R0.15 4X 2.65 MAX GAGE PLANE C 0.41 0.15 SEATING PLANE 0.30 0.05 4.70 4.40 0.203 0.050 0.13 M C B B A SIDE VIEW A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO−214, VARIATION AB B C. D. DOES NOT COMPLY TO JEDEC STD. VALUE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5−2009 LAND PATTERN STANDARD: DIOM7957X241M F. 8° 0° 1.60 0.75 DETAIL A SCALE 2:1 NOTES: E. 0.45 DOCUMENT NUMBER: STATUS: 98AON13442G ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 SMC http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13442G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD DO214AB TO ON SEMICONDUCTOR. REQ. BY B. NG. DATE 31 AUG 2016 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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