Ordering number : ENA0408A
SB02-09C
Schottky Barrier Diode
http://onsemi.com
90V, 0.2A, Low IR, Single CP
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
• Fast reverse recovery time (trr max=10ns)
Low forward voltage (VF max=0.7V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Conditions
Ratings
Unit
VRRM
VRSM
Surge Forward Current
IO
IFSM
Junction Temperature
Storage Temperature
50Hz sine wave, 1 cycle
90
V
95
V
200
mA
5
A
Tj
--55 to +125
°C
Tstg
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7013A-004
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
0.1
SB02-09C-TB-E
Packing Type: TB
Marking
1.5
3
1.1
0.4
1 : Anode
2 : No Contact
3 : Cathode
CP
0.3
D
TB
0.05
0.95
2
LOT No.
1
LOT No.
0.5
2.5
0.5
2.9
Electrical Connection
3
1
Semiconductor Components Industries, LLC, 2013
September, 2013
2
71112 TKIM/42506SB MSIM TA-100742 No.A0408-1/7
SB02-09C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
VR
VF
IR
Forward Voltage
Reverse Current
min
IR=200μA
IF=200mA
typ
C
Reverse Recovery Time
trr
Rth(j-a)1
V
0.7
V
50
μA
10
pF
IF=IR=100mA, See specified Test Circuit.
10
Mounted in Cu-foiled area of 16mm2×0.2mm
Rth(j-a)2
Unit
max
90
VR=45V
VR=10V, f=1MHz
Interterminal Capacitance
Thermal Resistance
Ratings
Conditions
on glass epoxy board
ns
420
°C / W
330
°C / W
trr Test Circuit
10Ω
10mA
100Ω
10mA
50Ω
1.0mA
Duty≤10%
10μs
5V
trr
Ordering Information
Device
Package
Shipping
memo
CP
3,000pcs./reel
Pb Free
SB02-09C-TB-E
IF -- VF
1000
3
2
Reverse Current, IR -- μA
Forward Current, IF -- mA
5
Ta=125°C
5
Ta=
125
°C
25
°C
7
IR -- VR
1000
2
100
7
5
3
2
100°C
100
5
75°C
2
10
5
50°C
2
1.0
25°C
5
10
2
0.1
7
5
0.4
0
0.8
1.2
1.6
2.0
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180∞
200
(1)
(4)
(3)
(2)
Sine wave
50
180°
0
100
150
200
Average Output Current, IO -- A
250
5
3
2
10
7
5
3
360°
50
100
ID00305
f=1MHz
360°
0
80
C -- VR
100
θ
100
60
7
Rectangular
wave
150
40
Reverse Voltage, VR -- V
PF(AV) -- IO
250
20
0
2.4
ID00304
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- mW
Forward Voltage, VF -- V
300
ID00306
2
1.0
2
3
5
7
10
2
3
5
Reverse Voltage, VR -- V
7
2
100
ID00307
No.A0408-2/7
SB02-09C
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
7
Current waveform 50Hz sine wave
6
IS
20ms
t
5
4
3
2
1
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00308
No.A0408-3/7
SB02-09C
Embossed Taping Specification
SB02-09C-TB-E
No.A0408-4/7
SB02-09C
Outline Drawing
SB02-09C-TB-E
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.0
0.8
0.95
0.95
No.A0408-5/7
SB02-09C
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PS No.A0408-6/7