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SB1003M3-TL-E

SB1003M3-TL-E

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-323-3

  • 描述:

    RECTIFIER DIODE

  • 数据手册
  • 价格&库存
SB1003M3-TL-E 数据手册
Ordering number : ENA8375B SB1003M3 Schottky Barrier Diode 30V, 1A, Low IR, Single MCPH3 http://onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.85mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 30 Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V V Average Output Current IO 1.0 A Surge Forward Current IFSM 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C 50Hz sine wave, 1 cycle Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7019A-001 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel SB1003M3-TL-E SB1003M3-TL-W 0.15 0.25 2.0 Packing Type : TL 1.6 2.1 0.25 TL 2 0.3 Electrical Connection 3 0.07 0.85 0.65 SK LOT No. 0 to 0.02 1 Marking LOT No. 3 1 : Anode 2 : No Contact 3 : Cathode MCPH3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 May, 2014 52214HK TC-00002876/91212TKIM/63005MSIM SB No.8375-1/4 SB1003M3 Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage Forward Voltage Ratings Conditions VR VF1 IR=0.5mA IF=0.7A VF2 IR min Interterminal Capacitance C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Rth(j-a)1 Thermal Resistance Rth(j-a)2 max 30 IF=1.0A VR=16V VR=10V, f=1MHz Reverse Current typ V 0.45 0.50 0.48 0.53 15 27 When mounted in Cu-foiled area of 0.72mm2×0.03mm on glass epoxy substrate 2 When mounted on ceramic substrate (500mm ×0.8mm) Unit V V mA pF 10 ns 94.7 °C / W 67.7 °C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 50Ω 100Ω 10ms 10Ω --5V 10mA Duty≤10% 100mA 100mA trr Test Circuit trr Ordering Information Package Shipping memo SB1003M3-TL-E Device MCPH3 3,000pcs./reel Pb-Free SB1003M3-TL-W MCPH3 3,000pcs./reel Pb-Free and Halogen Free No.8375-2/4 SB1003M3 IF -- VF 3 2 3 2 0.1 7 5 0.1 0 0.8 0.2 0.3 0.5 0.6 0.7 (2) (4)(3) 360° 0.5 0.4 180° 360° 0.3 0.2 0.1 0 0.2 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.6 0.8 Average Output Current, IO -- A 0 °C 0.1 5 0.01 5 --25°C 0.0001 5 0 10 15 20 25 Reverse Voltage, VR -- V 30 35 IT09554 C -- VR 2 100 7 5 3 2 10 1.0 IFSM -- t 14 25°C 1.0 5 3 (1) Sine wave 50°C 10 5 IT09553 PF(AV) -- IO θ 0.6 0 0.4 Forward Voltage, VF -- V Rectangular wave 0.7 75°C 100 5 0.001 5 Interterminal Capacitance, C -- pF 2 Average Forward Power Dissipation, PF(AV) -- W Reverse Current, IR -- mA 5 Ta= 125 °C 100 °C 75 ° C 50°C 25°C 0°C --25°C Forward Current, IF -- A 7 3 Surge Forward Current, IFSM(Peak) -- A Ta=125°C 100°C 1000 5 1.0 0.01 IR -- VR 10000 5 1.2 IT09555 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No.8375-3/4 SB1003M3 Outline Drawing SB1003M3-TL-E, SB1003M3-TL-W Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.8375-4/4
SB1003M3-TL-E 价格&库存

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