SBAS16XV2T5G

DIE DATA SHEET www.onsemi.com Switching Diode 1 CATHODE BAS16XV2 2 ANODE 2 Features • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Unit 1 SOD−523 CASE 502 MARKING DIAGRAM 1 A6 MG G 2 A6 = Specific Device Code M = Date Code G = Pb−Free Package Symbol Value Continuous Reverse Voltage VR 100 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Device Package Shipping† Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 500 mA BAS16XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM A BAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel SBAS16XV2T1G SOD−523 (Pb−Free) 3000 /T ape & Reel SBAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel 4.0 1.0 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.57 mW/°C RθJA 635 °C/W TJ, Tstg −55 to 150 °C (Note: Microdot may be in either location) ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR-5 Minimum Pad. © Semiconductor Components Industries, LLC, 2014 June, 2023 − Rev. 10 1 Publication Order Number: BAS16XV2T1/D BAS16XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 100 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mA) V(BR) mA V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR − 1.75 V Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10mA to VR = 5.0V, RL = 500 Ω) QS − 45 pC 820 Ω +10 V 2.0 k 100 μH tr 0.1 μF IF tp t IF trr 10% t 0.1 μF 90% D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS16XV2 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 8 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M DATE 28 SEP 2010 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 L 0.48 PACKAGE OUTLINE L2 1.80 2X 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW XX M XX 1 2 1 STYLE 1 XX M M GENERIC MARKING DIAGRAM* 2 STYLE 2 = Specific Device Code Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: NO POLARITY 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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