SBAT54SLT1G

SBAT54SLT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-23

  • 描述:

    肖特基二极管 Dual,Series VR=30V IF=200mA IR=2μA CT=10pF SOT23

  • 详情介绍
  • 数据手册
  • 价格&库存
SBAT54SLT1G 数据手册
BAT54SL Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com 30 VOLT DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 CASE 318 STYLE 11 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C 200 Max mA 600 1.0 mA A Rating Forward Current (DC) IF Non−Repetitive Peak Forward Current tp < 10 msec Square pulse = 1 sec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM LD3M G G mA 300 1 Junction Temperature TJ −55 to 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LD3 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAT54SLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAT54SLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 17 1 Publication Order Number: BAT54SLT1/D BAT54SL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 − − − 7.6 10 − 0.5 2.0 − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 − − 5.0 Unit V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr V pF Adc V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820  +10 V 2k 100 H 0.1 F IF tr 0.1 F tp T IF trr 10% T DUT 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54SL 100 IF, FORWARD CURRENT (mA) 1 25°C 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT (A) TA = 150°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOTAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3 25 30 BAT54SL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAT54SLT1/D
SBAT54SLT1G
物料型号:BAT54SL 器件简介:BAT54SL 是一款高速开关二极管,适用于高速开关应用、电路保护和电压钳位。

极低的正向电压降低了导通损耗。

微型表面贴装封装非常适合空间受限的手持和便携式应用。

引脚分配:1 - 阳极,2 - 阴极,3 - 阴极/阳极 参数特性:反向电压 VR = 30V,正向功率耗散 PF = 225 mW @ TA=25°C,正向电流 IF = 200 mA(最大值),非重复峰值正向电流 IFSM = 600 mA(10 ms方波,1秒间隔),重复峰值正向电流 IFRM = 300 mA(1秒脉冲波形,占空比66%),结温 TJ = 55至150°C,存储温度范围 Tstg = -55至+150°C 功能详解:具有极快的开关速度和极低的正向电压,符合汽车和其他需要独特现场和控制变更要求的应用,符合AEC-Q101标准,无铅、无卤素/无溴化物,符合RoHS标准。

应用信息:适用于高速开关、电路保护和电压钳位等应用。

封装信息:SOT-23(TO-236)封装,尺寸和公差按照ASME Y14.5M标准,最大引脚厚度包括引脚表面处理,最小引脚厚度是基材的最小厚度。

封装标记为LD3M,其中LD3是器件代码,M是日期代码。

封装为无铅封装。
SBAT54SLT1G 价格&库存

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SBAT54SLT1G

    库存:192000

    SBAT54SLT1G
    •  国内价格
    • 1+0.60060
    • 200+0.41360
    • 1500+0.37620
    • 3000+0.35200

    库存:5990

    SBAT54SLT1G
    •  国内价格 香港价格
    • 1+1.621631+0.20826
    • 10+0.9631810+0.12370
    • 100+0.59315100+0.07618
    • 500+0.43075500+0.05532
    • 1000+0.377741000+0.04851

    库存:49713

    SBAT54SLT1G
      •  国内价格
      • 1+0.34270
      • 100+0.33250
      • 1000+0.32350

      库存:0

      SBAT54SLT1G
      •  国内价格
      • 10+0.59229
      • 100+0.49340
      • 600+0.48600
      • 1200+0.47142

      库存:660