SBAT54XV2T5G

DATA SHEET www.onsemi.com Schottky Barrier Diodes BAT54XV2 These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA • S Prefix for Automotive and Other Applications Requiring Unique 1 • MARKING DIAGRAM Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Characteristic PD 200 mW 2.0 mW/°C Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Thermal Resistance, Junction−to−Ambient RJA 635 TJ, Tstg −55 to 125 Junction and Storage Temperature December, 2022 − Rev. 13 1 JVM G G JV = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAT54XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel BAT54XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel °C/W SBAT54XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel °C SBAT54XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. © Semiconductor Components Industries, LLC, 2017 SOD−523 CASE 502 Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAT54XV2T1/D BAT54XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.3 2.0 A Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF − − − − − 0.22 0.28 0.35 0.39 0.46 0.24 0.32 0.40 0.50 0.80 Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) Figure 1 trr − − 5.0 Reverse Breakdown Voltage (IR = 10 A) V ns 820  +10 V 2k 100 H 0.1 F IF t tp r 0.1 F IF trr 10% DUT 50  Output Pulse Generator t 90% 50  Input Sampling Oscilloscope VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 t BAT54XV2 1000 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 1 50°C 10 1 25°C 1.0 85°C 0.1 0.0 0.1 25°C 0.2 −40°C 0.3 −55°C 0.4 0.5 100 TA = 125°C 10 TA = 85°C 1.0 TA = 25°C 0.1 0.01 0.6 TA = 150°C 0 5 VF, FORWARD VOLTAGE (VOLTS) IFSM, FORWARD SURGE MAX CURRENT (A) CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 5 10 15 20 30 25 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage 0 10 25 30 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms) Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 3 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M DATE 28 SEP 2010 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 L 0.48 PACKAGE OUTLINE L2 1.80 2X 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW XX M XX 1 2 1 STYLE 1 XX M M GENERIC MARKING DIAGRAM* 2 STYLE 2 = Specific Device Code Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: NO POLARITY 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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