SBAV70LT3G

BAV70L, SBAV70L Dual Switching Diode Common Cathode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.5 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms t=1s IFSM A SOT−23 (TO−236) CASE 318 STYLE 9 ANODE 1 3 CATHODE 31 16 10 4.5 2.5 1.0 0.5 MARKING DIAGRAM A4 M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature September, 2018 − Rev. 13 A4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAV70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BAV70LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SBAV70LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) Device 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 2 ANODE 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV70LT1/D BAV70L, SBAV70L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Reverse Breakdown Voltage (I(BR) = 100 mA) Min Max 100 − − − − 60 1.0 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 Unit V(BR) Reverse Voltage Leakage Current (Note 3) (VR = 25 V, TJ = 150°C) (VR = 100 V) (VR = 70 V, TJ = 150°C) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Recovery Time RL = 100 W (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) trr V mA pF mV ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while second diode is unbiased. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAV70L, SBAV70L Curves Applicable to Each Anode 10 10 TA = 85°C IR, REVERSE CURRENT (mA) TA = 125°C TA = 55°C TA = 25°C 1 TA = 150°C TA = −40°C 0.1 TA = −55°C 0.01 0.1 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 0 1.0 10 Figure 2. Forward Voltage 20 30 40 50 VF, REVERSE VOLTAGE (V) Figure 3. Leakage Current 0.6 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.58 0.56 0.54 0.52 0.5 0.48 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 7 8 60 70 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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