DATA SHEET
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Dual Switching Diode
Common Cathode
SOT−323
CASE 419
STYLE 5
BAV70W, SBAV70W
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
ANODE
1
3
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
MARKING DIAGRAM
Symbol
Max
Unit
Reverse Voltage
VR
100
V
Forward Current
IF
200
mA
IFM(surge)
500
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
2.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
Peak Forward Surge Current
2
ANODE
0.7
A
3
A4 MG
G
1
2
A4
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
mW
1.6
mW/°C
RqJA
625
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Package
Shipping†
BAV70WT1G
SOT−323
(Pb−Free)
3,000 / Tape & Reel
SBAV70WT1G
SOT−323
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
May, 2023 − Rev. 10
1
Publication Order Number:
BAV70WT1/D
BAV70W, SBAV70W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Min
Max
100
−
−
−
1.0
100
−
−
−
−
715
855
1000
1250
−
1.5
−
6.0
−
1.75
V(BR)
Reverse Voltage Leakage Current (Note 3)
(VR = 100 V)
(VR = 50 V)
IR
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)
trr
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 2)
Unit
V
mA
nA
mV
pF
ns
VRF
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while the second diode is unbiased.
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2
BAV70W, SBAV70W
BAV70
RS = 50 W
SAMPLING
OSCILLOSCOPE
RL = 50 W
IF
tr
tp
t
10%
+IF
trr
10%OF
90%
VR
OUTPUT PULSE
INPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
450 W
1 KW
RS = 50 W
SAMPLING
OSCILLOSCOPE
RL = 50 W
BAV70
I
V
90%
VFR
10%
t
tr
tp
INPUT PULSE
Figure 2.
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3
OUTPUT PULSE
t
VR
100W
BAV70W, SBAV70W
10
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
TA = 150°C
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
Figure 3. Forward Voltage
18
IFSM, FORWARD SURGE MAX CURRENT (A)
CD , DIODE CAPACITANCE (pF)
50
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Leakage Current
1.0
0.9
0.8
0.7
0.6
10
0
2
4
6
16
14
12
10
8
6
4
2
0
0.001
8
VR, REVERSE VOLTAGE (VOLTS)
0.01
0.1
1
10
tp, PULSE ON TIME (ms)
100
Figure 6. Forward Surge Current
Figure 5. Capacitance
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4
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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