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SBC807-25WT1G

SBC807-25WT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT346

  • 描述:

    TRANS PNP 45V 0.5A SC-70

  • 数据手册
  • 价格&库存
SBC807-25WT1G 数据手册
DATA SHEET www.onsemi.com General Purpose Transistors COLLECTOR 3 PNP Silicon 1 BASE BC807-25W, BC807-40W 2 EMITTER Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 SC−70 CASE 419 STYLE 3 MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO −45 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 460 mW 272 °C/W Collector Current − Continuous MARKING DIAGRAM 5x M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA 1 5x M G = Device Code x = B or C = Date Code* = Pb−Free Package (Note: Microdot may be in either location) TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm2. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 March, 2022 − Rev. 5 1 Publication Order Number: BC807−25W/D BC807−25W, BC807−40W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 160 250 40 − − − 400 600 − OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) hFE BC807−25, SBC807−25 BC807−40, SBC807−40 (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, VCE = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping† 5B SC−70 (Pb−Free) 3000 / Tape & Reel BC807−25WT1G SBC807−25WT1G* BC807−25WT3G 10,000 / Tape & Reel BC807−40WT1G SBC807−40WT1G* SC−70 (Pb−Free) 5C 3000 / Tape & Reel 10,000 / Tape & Reel BC807−40WT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W 500 1 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.01 0.1 1 Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) −55°C IC/IB = 10 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) 0.9 0.2 −55°C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 25°C 0.01 1 0.1 IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) Figure 5. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 3 1 BC807−25W, BC807−40W VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 6. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 7. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitances www.onsemi.com 4 -100 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W 1000 1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 150°C 800 700 600 500 25°C 400 300 −55°C 200 100 0 0.001 0.01 0.01 0.1 1 Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) −55°C IC/IB = 10 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) 0.9 0.2 −55°C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 25°C 0.01 1 0.1 IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 13. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 5 1000 1 BC807−25W, BC807−40W VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 14. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 15. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Capacitances www.onsemi.com 6 -100 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W IC, COLLECTOR CURRENT (A) 1 1 mS 1S 100 mS 0.1 10 mS Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W) Figure 17. Safe Operating Area 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 18. Thermal Response www.onsemi.com 7 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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