DATA SHEET
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General Purpose
Transistors
COLLECTOR
3
PNP Silicon
1
BASE
BC807-25W, BC807-40W
2
EMITTER
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
2
SC−70
CASE 419
STYLE 3
MAXIMUM RATINGS
Symbol
Value
Unit
Collector − Emitter Voltage
Rating
VCEO
−45
V
Collector − Base Voltage
VCBO
−50
V
Emitter − Base Voltage
VEBO
−5.0
V
IC
−500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
PD
460
mW
272
°C/W
Collector Current − Continuous
MARKING DIAGRAM
5x M G
G
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
1
5x
M
G
= Device Code
x = B or C
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2022 − Rev. 5
1
Publication Order Number:
BC807−25W/D
BC807−25W, BC807−40W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−50
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
−
−
−
−
−100
−5.0
nA
mA
160
250
40
−
−
−
400
600
−
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
hFE
BC807−25, SBC807−25
BC807−40, SBC807−40
(IC = −500 mA, VCE = −1.0 V)
−
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−
−
−0.7
V
Base −Emitter On Voltage
(IC = −500 mA, VCE = −1.0 V)
VBE(on)
−
−
−1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping†
5B
SC−70
(Pb−Free)
3000 / Tape & Reel
BC807−25WT1G
SBC807−25WT1G*
BC807−25WT3G
10,000 / Tape & Reel
BC807−40WT1G
SBC807−40WT1G*
SC−70
(Pb−Free)
5C
3000 / Tape & Reel
10,000 / Tape & Reel
BC807−40WT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
500
1
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.01
0.1
1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (A)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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3
1
BC807−25W, BC807−40W
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
-1.0
TJ = 25°C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 6. Saturation Region
0
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 7. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
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4
-100
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
1000
1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
900
150°C
800
700
600
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.01
0.1
1
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
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5
1000
1
BC807−25W, BC807−40W
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
-1.0
TJ = 25°C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 14. Saturation Region
0
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 15. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitances
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6
-100
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
IC, COLLECTOR CURRENT (A)
1
1 mS
1S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W)
Figure 17. Safe Operating Area
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 18. Thermal Response
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7
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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